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NTE2708 PDF预览

NTE2708

更新时间: 2024-11-01 22:30:15
品牌 Logo 应用领域
NTE 存储内存集成电路可编程只读存储器电动程控只读存储器
页数 文件大小 规格书
4页 34K
描述
Integrated Circuit NMOS, 8K UV EPROM, 450ns

NTE2708 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:Active零件包装代码:DIP
包装说明:DIP-24针数:24
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.61风险等级:5.65
Is Samacsys:N最长访问时间:450 ns
JESD-30 代码:R-XDIP-T24JESD-609代码:e0
内存密度:8192 bit内存集成电路类型:UVPROM
内存宽度:8功能数量:1
端子数量:24字数:1024 words
字数代码:1000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:1KX8输出特性:3-STATE
封装主体材料:UNSPECIFIED封装代码:DIP
封装等效代码:DIP24,.6封装形状:RECTANGULAR
封装形式:IN-LINE并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
子类别:Other Memory ICs最大供电电压 (Vsup):5.25 V
最小供电电压 (Vsup):4.75 V标称供电电压 (Vsup):5 V
表面贴装:NO技术:NMOS
温度等级:COMMERCIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子节距:2.54 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

NTE2708 数据手册

 浏览型号NTE2708的Datasheet PDF文件第2页浏览型号NTE2708的Datasheet PDF文件第3页浏览型号NTE2708的Datasheet PDF文件第4页 
NTE2708  
Integrated Circuit  
NMOS, 8K UV EPROM, 450ns  
Description:  
The NTE2708 is an ultra–violet light–erasable, electrically programmable read only memory. It has  
8, 192 bits organized as 1024 words of 8–bit length. This device is fabricated using N–channel silicon–  
gate technology for high speed and simple interface with MOS and bipolar circuits. All inputs (includ-  
ing program data inputs) can be driven by Series 74 TTL circuits without the use of external pull–up  
resistors. Each output can drive one Series 74 or 74LS TTL circuit without external resistors. The  
data outputs for the NTE2708 are three–state for OR tying multiple devices on a common bus.  
This EPROM is designed for high–density fixed memory applications where fast turn arounds and/or  
program changes are required. This device is designed for operation from 0° to +70°C and is supplied  
in a 24–Lead DIP package for insertion in mounting–hole rows on 600–mil (15.2 mm) centers.  
Features:  
D 1024 X 8 Organization  
D All Inputs and Outputs Fully TTL Compatible  
D Static Operation (No Clocks, No Refresh)  
D Performance Ranges:  
Max Access: 450ns  
Min Cycle: 450ns  
D 3–State Outputs for OR–Ties  
D 8–Bit Output  
D Plug–Compatible Pin–Outs Allowing Interchangeability  
Absolute Maximum Ratings: (TA = 0° to +70°C, Note 1 unless otherwise specified)  
Supply Voltage, VCC (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 to +15V  
Supply Voltage, VDD (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 to +20V  
Supply Voltage, VSS (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 to +15V  
All Input Voltage (except program) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 to +20V  
Program Input (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 to +35V  
Output Voltage (operating, with respect to VSS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –2 to +7V  
Operating free–air temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0°C to 70°C  
Storage temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55°C to 125°C  
Note 1. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permenant  
damage to the device. This is a stress rating only and functional operation of the device at  
these or any other conditions beyond those indicated in the “Recommended Operating  
Conditions” section of this specification is not implied. Exposure to absolute–maximum–  
rated conditions for extended periods may affect device reliability.  
Note 2. Under absolute maximum ratings, voltage values are with respect to the most–negative sup-  
ply voltage, VBB (substrate), unless otherwise noted. Throughout the remainder of this data  
sheet, voltage values are with respect to VSS.  

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