NTE280 (NPN) & NTE281 (PNP)
Silicon Complementary Trasistors
Audio Power Amplifier
Description:
The NTE280 (NPN) and NTE281 (PNP) are silicon complementary transistors in a TO3 type package
designed for use in high power, high fidelity audio frequency amplifier applications.
Features:
D High Power Dissipation: PC = 100W
D Collector–Emitter Breakdown Voltage: V(BR)CEO = 140V
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140V
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A
Emitter Current, IE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –12A
Collector Power Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
Symbol
Test Conditions
Min
140
5
Typ Max Unit
V
I = 100mA, I = 0
–
–
–
–
V
V
(BR)CEO
C
B
V
I = 10mA, I = 0
E C
(BR)EBO
I
V
= 60V, I = 0
–
–
100
100
140
3.0
2.5
–
µA
µA
CBO
CB
EB
CE
E
Emitter Cutoff Current
I
V
V
= 5V, I = 0
–
–
EBO
C
DC Current Gain
h
FE
= 5V, I = 2A
40
–
–
C
Collector–Emitter Saturation Voltage
Base–Emitter ON Voltage
Current–Gain Bandwidth Product
Output Capacitance
V
CE(sat)
I = 7A, I = 700mA
–
V
V
C
B
V
BE(on)
V
= 5V, I = 7A
–
–
CE
CE
CE
C
f
T
V
V
= 5V, I = 2A
–
5
MHz
pF
C
C
cb
= 10V, I = 0, f = 1MHz
–
220
–
E
Note 1. NTE280MP is a matched pair of NTE280 with their DC Current Gain (hFE) matched to within
10% of each other.
Note 2. NTE281MCP is a matched complementary pair containing 1 each of NTE280 (NPN) and
NTE281 (PNP).