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NTE27C256-15D PDF预览

NTE27C256-15D

更新时间: 2024-11-02 20:05:51
品牌 Logo 应用领域
NTE 可编程只读存储器光电二极管内存集成电路
页数 文件大小 规格书
7页 84K
描述
UVPROM, 32KX8, 150ns, CMOS, PDIP28, DIP-28

NTE27C256-15D 技术参数

生命周期:Active零件包装代码:DIP
包装说明:DIP-28针数:28
Reach Compliance Code:unknown风险等级:5.69
最长访问时间:150 ns其他特性:LG-MAX
JESD-30 代码:R-PDIP-T28长度:37.34 mm
内存密度:262144 bit内存集成电路类型:UVPROM
内存宽度:8功能数量:1
端子数量:28字数:32768 words
字数代码:32000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:32KX8封装主体材料:PLASTIC/EPOXY
封装代码:DIP封装形状:RECTANGULAR
封装形式:IN-LINE并行/串行:PARALLEL
座面最大高度:5.72 mm最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:NO技术:CMOS
温度等级:COMMERCIAL端子形式:THROUGH-HOLE
端子节距:2.54 mm端子位置:DUAL
宽度:15.24 mmBase Number Matches:1

NTE27C256-15D 数据手册

 浏览型号NTE27C256-15D的Datasheet PDF文件第2页浏览型号NTE27C256-15D的Datasheet PDF文件第3页浏览型号NTE27C256-15D的Datasheet PDF文件第4页浏览型号NTE27C256-15D的Datasheet PDF文件第5页浏览型号NTE27C256-15D的Datasheet PDF文件第6页浏览型号NTE27C256-15D的Datasheet PDF文件第7页 
NTE27C25612D, NTE27C25615D, NTE27C25670D  
Integrated Circuit  
256 Kbit (32Kb x 8) UVEPROM  
28Lead DIP Type Package  
NTE27C25615P  
Integrated Circuit  
256 Kbit (32Kb x 8) OTPEPROM  
28Lead DIP Type Packag  
Description:  
The NTE27C256 is a 256Kbit EPROM in a 28Lead DIP type package ideally suited for microproces-  
sor systems requiring large programs and is organized as 32,768 by 8 bits. The NTE27C25612D,  
NTE27C25615D, and NTE27C25670D have a transparent lid which allows the user to expose the  
chip to ultraviolet light to erase the bit pattern. A new pattern can then be written to the device by follow-  
ing the programming procedure. The NTE27C25615P is suitable for applications where the content  
is programmed only one time and erasure is not required.  
Features:  
D 5V 10% Supply Voltage in Read Operation  
D Access Time: 45ns  
D Low Power “CMOS” Consumption:  
Active Current 30mA at 5MHz  
Standby Current 100A  
D Programming Voltage: 12.75V 0.25V  
D Programming Time: 100s/Word  
Absolute Maximum Ratings: (Note 1)  
Supply Voltage, VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 to +7V  
Input or Output Voltage (Except A9, Note 2), VIO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 to +7V  
A9 Voltage (Note 2), VA9 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 to +13.5V  
Program Supply Voltage, VPP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 to +14V  
Ambient Operating Temperature Range, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40to +125C  
Temperature Under Bias Range, TBIAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50to +125C  
Storage Temperature Range, TSTG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65to +150C  
Note 1. Except for the rating “Operating Temperature Range”, stresses above those listed in the  
table “Absolute Maximum Ratings” may cause permanent damage to the device. These are  
stress ratings only and operation of the device at these or any other conditions above those  
indicated in the Operating sections of this specification is not implied. Exposure to Absolute  
Maximum Rating conditions for extended periods may affect device reliability.  
Note 2. Minimum DC voltage on the input or output is 0.5V with possible undershoot to 2.0V for  
a period less than 20ns. Maximum DC voltage on output is VCC +0.5V with possible over-  
shoot to VCC +2V for a period less than 20ns.  
Rev. 1018  

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