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NTE284MP PDF预览

NTE284MP

更新时间: 2024-11-02 20:22:35
品牌 Logo 应用领域
NTE 局域网放大器晶体管
页数 文件大小 规格书
2页 22K
描述
Power Bipolar Transistor, 16A I(C), 180V V(BR)CEO, 2-Element, NPN, Silicon, TO-3, Metal, 2 Pin,

NTE284MP 技术参数

生命周期:ActiveReach Compliance Code:unknown
ECCN代码:EAR99风险等级:2.1
Is Samacsys:N其他特性:MATCHED PAIR OF NTE284
外壳连接:COLLECTOR最大集电极电流 (IC):16 A
集电极-发射极最大电压:180 V配置:SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE):70JEDEC-95代码:TO-3
JESD-30 代码:O-MBFM-P2元件数量:2
端子数量:2封装主体材料:METAL
封装形状:ROUND封装形式:FLANGE MOUNT
极性/信道类型:NPN功耗环境最大值:150 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子形式:PIN/PEG
端子位置:BOTTOM晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):6 MHz
Base Number Matches:1

NTE284MP 数据手册

 浏览型号NTE284MP的Datasheet PDF文件第2页 
NTE284 (NPN) & NTE285 (PNP)  
Silicon Complementary Transistors  
Audio Amplifier Output  
Description:  
The NTE284 (NPN) and NTE285 (PNP) are silicon complementary power transistors in a TO3 type  
package designed for use in power amplifier applications.  
Applications:  
D Recommended for 100W High–Fidelity Audio Frequency Amplifier Output Stage  
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)  
Collector to Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180V  
Collector to Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180V  
Emitter to Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V  
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A  
Emitter Current, IE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A  
Power Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150W  
Junction Temperature, Tj . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C  
Storage Temperature, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65°C to +150°C  
Electrical Characteristics: (TA = +25°C unless otherwise specified)  
Parameter  
Collector Cutoff Current  
Emitter Cutoff Current  
Symbol  
ICBO  
Condition  
VCB = 90V, IE = 0  
VEB = 5V, IC = 0  
Min Typ Max Unit  
6
100 µA  
100 µA  
IEBO  
Collector–Emitter Breakdown Voltage V(BR)CEO IC = 0.1A, IB = 0  
Emitter–Base Breakdown Voltage V(BR)EBO IE = 10mA, IC = 0  
180  
5
V
V
DC Current Gain  
hFE  
VCE = 5V, IC = 2A  
70  
140  
3.0  
2.5  
V
Collector–Emitter Saturation Voltage VCE(sat) IC = 10A, IB = 1A  
V
Base to Emitter Voltage  
VBE  
fT  
VCE = 5V, IC = 10A  
VCE = 5V, IC = 2A  
V
Current Gain Bandwidth Product  
MHZ  
Output Capacitance  
NTE284  
Cob  
VCB = 10V, IE = 0, f = 1MHZ  
300  
450  
pF  
pF  
NTE285  
Note 1. NTE284MP is a matched pair of NTE284 with their DC Current Gain (hFE) matched to within  
10% of each other.  
Note 2. NTE285MP is a matched pair of NTE285 with their DC Current Gain (hFE) matched to within  
10% of each other.  
Note 3. NTE285MCP is a matched complementary pair containing 1 each of NTE284 (NPN) and  
NTE285 (PNP).  

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