Datasheet > NTE27C1001-15D

NTE27C1001-15D

更新时间： 2024-11-03 06:12:51

品牌	Logo	应用领域
NTE		可编程只读存储器光电二极管
页数	文件大小	规格书
6页	78K
描述
UVPROM, 128KX8, 150ns, CMOS, PDIP32, DIP-32

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NTE27C1001-15D 数据手册

NTE27C1001−10D

NTE27C1001−12D

NTE27C1001−15D

Integrated Circuit

1 Mbit (128Kb x 8) UV EPROM

Description:

The NTE27C1001 is a 1 Mbit EPROM in a 32−Lead DIP type package ideally suited for microproces-

sor systems requiring large programs and is organized as 131,072 by 8 bits. This device has a trans-

parent lid which allows the user to expose the chip to ultraviolet light to erase the bit pattern. A new

pattern can then be written to the device by following the programming procedure.

Features:

D 5V +10% Supply Voltage in Read Operation

D Access Time: 35ns

D Low Power “CMOS” Consumption:

− Active Current 30mA at 5MHz

− Standby Current 100+A

D Programming Voltage: 12.75V +0.25V

D Programming Time: 100+s/Word

Absolute Maximum Ratings: (Note 1)

Supply Voltage, V_CC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −2 to +7V

Input or Output Voltage (Except A9, Note 2), V_IO. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −2 to +7V

A9 Voltage (Note 2), V_A9. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −2 to +13.5V

Program Supply Voltage, V_PP. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −2 to +14V

Ambient Operating Temperature Range, T_A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −405 to +1255C

Temperature Under Bias Range, T_BIAS. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −505 to +1255C

Storage Temperature Range, T_STG. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −655 to +1505C

Note 1. Except for the rating “Operating Temperature Range”, stresses above those listed in the

table “Absolute Maximum Ratings” may cause permanent damage to the device. These are

stress ratings only and operation of the device at these or any other conditions above those

indicated in the Operating sections of this specification is not implied. Exposure to Absolute

Maximum Rating conditions for extended periods may affect device reliability.

Note 2. Minimum DC voltage on the input or output is −0.5V with possible undershoot to −2.0V for

a period less than 20ns. Maximum DC voltage on output is V_CC+0.5V with possible over-

shoot to V_CC+2V for a period less than 20ns.

Rev. 3−14

12 3 4 5 6

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与NTE27C1001-15D相关器件

型号	品牌	获取价格	描述	数据表
NTE27C256-12D	NTE	获取价格	UVPROM, 32KX8, 120ns, CMOS, PDIP28, DIP-28
NTE27C256-15D	NTE	获取价格	UVPROM, 32KX8, 150ns, CMOS, PDIP28, DIP-28
NTE27C512-12D	NTE	获取价格	UVPROM, 64KX8, 120ns, CMOS, PDIP28, DIP-28
NTE28	NTE	获取价格	Germanium PNP Transistor High Current, High Gain Amplifier
NTE280	NTE	获取价格	Silicon Complementary Trasistors Audio Power Amplifier
NTE2800	NTE	获取价格	Memory IC,
NTE280MP	ETC	获取价格	TRANSISTOR \| BJT \| PAIR \| NPN \| 150V V(BR)CEO \| 12A I(C) \| TO-3
NTE281	NTE	获取价格	Silicon Complementary Trasistors Audio Power Amplifier
NTE281MCP	ETC	获取价格	TRANSISTOR \| BJT \| PAIR \| COMPLEMENTARY \| 150V V(BR)CEO \| 12A I(C) \| TO-3
NTE281MP	NTE	获取价格	Transistor,

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