捷配DataSheet查询网关于“存储”相关器件DataSheet数据手册500+个 更新时间:2024-04-20 07:03:45
型号 | Logo | 品牌 | 价格 | 文档 | 应用 | 描述 |
MX26C1000AMC-12 | Macronix | 获取价格 | 存储内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器 | 1M-BIT [128K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM | ||
CD22100 | HARRIS | 获取价格 | 存储开关 | CMOS 4 x 4 Crosspoint Switch with Control Memory High-Voltage Type (20V Rating) | ||
CD22100E | HARRIS | 获取价格 | 存储开关光电二极管输出元件 | CMOS 4 x 4 Crosspoint Switch with Control Memory High-Voltage Type (20V Rating) | ||
S29GL128P12TAI010 | SPANSION | 获取价格 | 闪存存储 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology | ||
S29GL01GP12TAI013 | SPANSION | 获取价格 | 闪存存储内存集成电路光电二极管 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology | ||
S29GL128P12TAI013 | SPANSION | 获取价格 | 闪存存储内存集成电路光电二极管 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology | ||
S29GL128P12TAI020 | SPANSION | 获取价格 | 闪存存储内存集成电路光电二极管 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology | ||
S29GL256P12FAI010 | SPANSION | 获取价格 | 闪存存储内存集成电路 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology | ||
S29GL512P12FAI012 | SPANSION | 获取价格 | 闪存存储内存集成电路 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology | ||
S29GL256P12FAI022 | SPANSION | 获取价格 | 闪存存储内存集成电路 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology | ||
S29GL01GP12FAI023 | SPANSION | 获取价格 | 闪存存储内存集成电路 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology | ||
S29GL128P11TAI010 | SPANSION | 获取价格 | 闪存存储内存集成电路光电二极管 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology | ||
S29GL512P11TAI020 | SPANSION | 获取价格 | 闪存存储内存集成电路光电二极管 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology | ||
S29GL128P11TAI020 | SPANSION | 获取价格 | 闪存存储内存集成电路光电二极管 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology | ||
S29GL01GP11TAI023 | SPANSION | 获取价格 | 闪存存储内存集成电路光电二极管 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology | ||
S29GL512P11TAI023 | SPANSION | 获取价格 | 闪存存储内存集成电路光电二极管 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology | ||
S29GL128P11FAI010 | SPANSION | 获取价格 | 闪存存储内存集成电路 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology | ||
S29GL128P11FAI012 | SPANSION | 获取价格 | 闪存存储内存集成电路 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology | ||
S29GL128P10FAIR10 | SPANSION | 获取价格 | 闪存存储内存集成电路 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology | ||
KM681000CLTI-7L | SAMSUNG | 获取价格 | 存储内存集成电路静态存储器光电二极管 | 128K x8 bit Low Power CMOS Static RAM | ||
HY57V561620CLTP-7 | HYNIX | 获取价格 | 存储内存集成电路光电二极管动态存储器时钟 | 4 Banks x 4M x 16Bit Synchronous DRAM | ||
HY57V561620CLTP-P | HYNIX | 获取价格 | 存储内存集成电路光电二极管动态存储器时钟 | 4 Banks x 4M x 16Bit Synchronous DRAM | ||
HY57V561620CLTP-S | HYNIX | 获取价格 | 存储内存集成电路光电二极管动态存储器时钟 | 4 Banks x 4M x 16Bit Synchronous DRAM | ||
P4C164-8CILF | PYRAMID | 获取价格 | 存储内存集成电路静态存储器 | ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS | ||
BS62UV256DCP10 | BSI | 获取价格 | 存储内存集成电路静态存储器 | Ultra Low Power CMOS SRAM 32K X 8 bit | ||
CD22100F | HARRIS | 获取价格 | 存储开关 | CMOS 4 x 4 Crosspoint Switch with Control Memory High-Voltage Type (20V Rating) | ||
P4C422-35PMB | PYRAMID | 获取价格 | 存储内存集成电路静态存储器光电二极管 | HIGH SPEED 256 x 4 STATIC CMOS RAM | ||
HYS64T128020EDL-2.5-B | QIMONDA | 获取价格 | 存储内存集成电路动态存储器双倍数据速率时钟 | 200-Pin Small-Outlined DDR2 SDRAM Modules | ||
HYS64T256022EDL-2.5-B | QIMONDA | 获取价格 | 存储内存集成电路动态存储器双倍数据速率时钟 | 200-Pin Dual Die Small-Outline-DDR2-SDRAM Modules | ||
HYS64T32000HDL-2.5-B | QIMONDA | 获取价格 | 存储内存集成电路动态存储器双倍数据速率时钟 | 200 Pin Small-Outlined DDR2 SDRAMs Modules | ||
HYS64T64020HDL-2.5-B | QIMONDA | 获取价格 | 存储动态存储器双倍数据速率 | 200 Pin Small-Outlined DDR2 SDRAMs Modules | ||
HYS64T128021HDL-2.5-B | QIMONDA | 获取价格 | 存储内存集成电路动态存储器双倍数据速率 | 200 Pin Small-Outlined DDR2 SDRAMs Modules | ||
HYS64T256020EDL-2.5-C | QIMONDA | 获取价格 | 存储内存集成电路动态存储器双倍数据速率时钟 | 200-Pin SO-DIMM DDR2 SDRAM Modules | ||
HYS64T128021EDL-2.5B2 | QIMONDA | 获取价格 | 存储内存集成电路动态存储器双倍数据速率时钟 | 200-Pin SO-DIMM DDR2 SDRAM Modules | ||
HYS64T128921EDL-2.5B2 | QIMONDA | 获取价格 | 存储内存集成电路动态存储器双倍数据速率时钟 | 200-Pin SO-DIMM DDR2 SDRAM Modules | ||
P4C422-35PC | PYRAMID | 获取价格 | 存储内存集成电路静态存储器光电二极管 | HIGH SPEED 256 x 4 STATIC CMOS RAM | ||
P4C422-35LC | PYRAMID | 获取价格 | 存储内存集成电路静态存储器 | HIGH SPEED 256 x 4 STATIC CMOS RAM | ||
P4C422-20LM | PYRAMID | 获取价格 | 存储内存集成电路静态存储器 | HIGH SPEED 256 x 4 STATIC CMOS RAM | ||
P4C422-20FMB | PYRAMID | 获取价格 | 存储内存集成电路静态存储器 | HIGH SPEED 256 x 4 STATIC CMOS RAM | ||
P4C422-20DMB | PYRAMID | 获取价格 | 存储内存集成电路静态存储器 | HIGH SPEED 256 x 4 STATIC CMOS RAM | ||
P4C422-20DM | PYRAMID | 获取价格 | 存储内存集成电路静态存储器 | HIGH SPEED 256 x 4 STATIC CMOS RAM | ||
HM51S4170CLTT-7 | HITACHI | 获取价格 | 存储内存集成电路光电二极管动态存储器 | 262,144-word x 16-bit Dynamic Random Access Memory | ||
DS2436B | DALLAS | 获取价格 | 电池存储内存集成电路监视器 | Battery ID/Monitor Chip | ||
P4C422-20CMB | PYRAMID | 获取价格 | 存储内存集成电路静态存储器 | HIGH SPEED 256 x 4 STATIC CMOS RAM | ||
M93C86-DS3G/S | STMICROELECTRONICS | 获取价格 | 存储内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟 | 16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit (8 | ||
M93C46-DS3G/S | STMICROELECTRONICS | 获取价格 | 存储内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟 | 16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit (8 | ||
M93C86-DS3G/W | STMICROELECTRONICS | 获取价格 | 存储内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟 | 16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit (8 | ||
M93C76-DS3G/W | STMICROELECTRONICS | 获取价格 | 存储内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟 | 16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit (8 | ||
P4C422-20CC | PYRAMID | 获取价格 | 存储内存集成电路静态存储器 | HIGH SPEED 256 x 4 STATIC CMOS RAM | ||
P4C422-15SMB | PYRAMID | 获取价格 | 存储内存集成电路静态存储器光电二极管 | HIGH SPEED 256 x 4 STATIC CMOS RAM | ||
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