NTB52N10
Power MOSFET
52 Amps, 100 Volts
N−Channel Enhancement−Mode D2PAK
http://onsemi.com
Features
• Source−to−DrainDiode Recovery Time Comparable to a Discrete
Fast Recovery Diode
V
R
DS(ON)
TYP
I MAX
D
DSS
• Avalanche Energy Specified
100 V
30 mW @ 10 V
52 A
• I
and R
Specified at Elevated Temperature
DSS
DS(on)
2
• Mounting Information Provided for the D PAK Package
• Pb−Free Packages are Available
N−Channel
D
Typical Applications
• PWM Motor Controls
• Power Supplies
• Converters
G
S
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
MARKING DIAGRAM
& PIN ASSIGNMENT
Rating
Symbol
Value
100
Unit
Drain−to−Source Voltage
V
Vdc
Vdc
Vdc
DSS
4
Drain−to−Source Voltage (R = 1.0 MW)
V
V
100
GS
DGR
Drain
Gate−to−Source Voltage
− Continuous
4
V
"20
"40
GS
NTB
52N10G
AYWW
− Non−Repetitive (t v10 ms)
p
1
2
3
GSM
Drain Current
Adc
− Continuous @ T = 25°C
I
52
40
156
A
A
2
D
D PAK
− Continuous @ T = 100°C
I
D
CASE 418B
STYLE 2
− Pulsed (Note 1)
I
1
2
3
DM
Gate Drain Source
Total Power Dissipation @ T = 25°C
P
178
1.43
2.0
W
W/°C
W
A
D
Derate above 25°C
Total Power Dissipation @ T = 25°C (Note 2)
A
NTB52N10 = Device Code
Operating and Storage Temperature Range
T , T
−55 to
+150
°C
A
Y
= Assembly Location
= Year
J
stg
WW
G
= Work Week
= Pb−Free Package
Single Pulse Drain−to−Source Avalanche
E
800
mJ
AS
Energy − Starting T = 25°C
J
(V = 50 Vdc, V = 10 Vdc,
DD
GS
I
= 40 A, L = 1.0 mH, R = 25 W)
L(pk)
G
ORDERING INFORMATION
Thermal Resistance
− Junction−to−Case
°C/W
†
R
R
R
0.7
62.5
50
Device
Package
Shipping
q
JC
JA
JA
− Junction−to−Ambient
− Junction−to−Ambient (Note 2)
q
q
2
NTB52N10
D PAK
50 Units / Rail
50 Units / Rail
2
NTB52N10G
D PAK
Maximum Lead Temperature for Soldering
Purposes, 1/8in from case for 10 seconds
T
260
°C
L
(Pb−Free)
2
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
NTB52N10T4
D PAK
800 / Tape & Reel
800 / Tape & Reel
2
NTB52N10T4G
D PAK
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1. Pulse Test: Pulse Width = 10 ms, Duty Cycle = 2%.
2. When surface mounted to an FR4 board using the minimum recommended
2
pad size, (Cu. Area 0.412 in ).
©
Semiconductor Components Industries, LLC, 2005
1
Publication Order Number:
August, 2005 − Rev. 3
NTB52N10/D