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NTB5411N PDF预览

NTB5411N

更新时间: 2024-01-12 20:46:12
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
7页 139K
描述
Power MOSFET 80 Amps, 60 Volts N-Channel D2PAK, TO-220

NTB5411N 数据手册

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NTB5411N, NTP5411N  
Power MOSFET  
80 Amps, 60 Volts  
N-Channel D2PAK, TO-220  
Features  
http://onsemi.com  
Low R  
DS(on)  
High Current Capability  
Avalanche Energy Specified  
These are PbFree Devices  
I
MAX  
D
V
R
MAX  
DS(ON)  
(Note 1)  
(BR)DSS  
60 V  
10 mW @ 10 V  
80 A  
Applications  
LED Lighting and LED Backlight Drivers  
DCDC Converters  
NChannel  
DC Motor Drivers  
D
Power Supplies Secondary Side Synchronous Rectification  
MAXIMUM RATINGS (T = 25°C Unless otherwise specified)  
J
G
Parameter  
DraintoSource Voltage  
Symbol  
Value  
60  
Unit  
V
V
DSS  
S
1
GatetoSource Voltage Continuous  
GatetoSource Voltage Nonrepetitive  
V
$20  
$30  
V
GS  
GS  
V
V
4
(T < 10 ms)  
P
4
Continuous Drain  
Current R  
Steady  
State  
T
= 25°C  
= 100°C  
= 25°C  
I
80  
61  
A
C
D
q
JC  
2
T
C
(Note 1)  
3
Power Dissipation  
Steady  
State  
T
C
P
166  
W
D
R
(Note 1)  
2
q
JC  
TO220AB  
CASE 221A  
STYLE 5  
D PAK  
CASE 418B  
STYLE 2  
Pulsed Drain Current  
t = 10 ms  
p
I
185  
A
DM  
1
2
Operating and Storage Temperature Range  
T , T  
J
55 to  
175  
°C  
stg  
3
MARKING DIAGRAM  
& PIN ASSIGNMENT  
Source Current (Body Diode)  
I
S
75  
A
Single Pulse DraintoSource Avalanche  
E
AS  
280  
mJ  
4
4
Energy Starting T = 25°C  
J
Drain  
Drain  
(V = 50 V , V = 10 V , I = 75 A,  
dc L(pk)  
DD  
dc  
GS  
L = 0.1 mH, R = 25 W)  
G
Lead Temperature for Soldering  
T
260  
°C  
L
NTB  
5411NG  
AYWW  
Purposes, 1/8from Case for 10 Seconds  
NTP  
5411NG  
AYWW  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Max  
0.9  
43  
Unit  
2
1
Gate  
3
1
Gate  
3
Drain  
JunctiontoCase (Drain) Steady State  
(Note 1)  
°C/W  
R
Source  
q
JC  
Source  
R
q
JA  
2
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Surface mounted on FR4 board using 1 sq in pad size,  
Drain  
G
A
Y
= PbFree Device  
= Assembly Location  
= Year  
WW = Work Week  
(Cu Area 1.127 sq in [1 oz] including traces).  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 5 of this data sheet.  
© Semiconductor Components Industries, LLC, 2009  
1
Publication Order Number:  
October, 2009 Rev. 2  
NTB5411N/D  
 

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