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NTB5412N

更新时间： 2024-01-30 15:00:05
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
7页 118K
描述
Power MOSFET 60 Amps, 60 Volts N-Channel D2PAK, TO-220

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NTB5412N 数据手册

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NTB5412N, NTP5412N  
Power MOSFET  
60 Amps, 60 Volts  
N-Channel D2PAK, TO-220  
Features  
http://onsemi.com  
• Low R  
DS(on)  
• High Current Capability  
• Avalanche Energy Specified  
• These are Pb−Free Devices  
I
MAX  
D
V
R
MAX  
DS(ON)  
(Note 1)  
(BR)DSS  
60 V  
14 mW @ 10 V  
60 A  
Applications  
• LED Lighting and LED Backlight Drivers  
• DC−DC Converters  
N−Channel  
• DC Motor Drivers  
D
• Power Supplies Secondary Side Synchronous Rectification  
MAXIMUM RATINGS (T = 25°C Unless otherwise specified)  
J
G
4
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
60  
Unit  
V
V
DSS  
S
Gate−to−Source Voltage − Continuous  
Gate−to−Source Voltage − Nonrepetitive  
V
GS  
$20  
$30  
V
V
GS  
V
(T < 10 ms)  
P
4
Continuous Drain  
Current R  
Steady  
State  
T
= 25°C  
= 100°C  
= 25°C  
I
60  
44  
A
C
D
q
JC  
T
C
(Note 1)  
1
2
3
Power Dissipation  
Steady  
State  
T
C
P
125  
W
D
R
(Note 1)  
q
JC  
2
TO−220AB  
D PAK  
Pulsed Drain Current  
t = 10 ms  
I
155  
A
CASE 221A  
STYLE 5  
CASE 418B  
STYLE 2  
p
DM  
1
2
Operating and Storage Temperature Range  
T , T  
J
−55 to  
175  
°C  
stg  
3
MARKING DIAGRAM  
& PIN ASSIGNMENT  
Source Current (Body Diode)  
I
60  
A
S
Single Pulse Drain−to−Source Avalanche  
E
AS  
180  
mJ  
4
Energy − Starting T = 25°C  
4
J
Drain  
(V = 50 V , V = 10 V , I  
= 60 A,  
DD  
dc  
G
GS  
dc L(pk)  
Drain  
L = 0.1 mH, R = 25 W)  
Lead Temperature for Soldering  
T
260  
°C  
L
NTB  
5412NG  
AYWW  
Purposes, 1/8″ from Case for 10 Seconds  
NTP  
5412NG  
AYWW  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Max  
1.2  
Unit  
2
1
Gate  
3
1
Gate  
3
Junction−to−Case (Drain) Steady State  
(Note 1)  
°C/W  
R
Drain  
q
JC  
Source  
Source  
R
43.2  
q
JA  
2
G
A
Y
= Pb−Free Device  
= Assembly Location  
= Year  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Surface mounted on FR4 board using 1 sq in pad size,  
Drain  
WW = Work Week  
(Cu Area 1.127 sq in [1 oz] including traces).  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 5 of this data sheet.  
© Semiconductor Components Industries, LLC, 2008  
1
Publication Order Number:  
November, 2008 − Rev. 1  
NTB5412N/D  
 
1234567

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