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NTB5426N

更新时间： 2024-01-06 03:28:34
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
7页 114K
描述
Power MOSFET 120 Amps, 60 Volts N-Channel D2PAK, TO-220

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NTB5426N 数据手册

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NTB5426N, NTP5426N  
Power MOSFET  
120 Amps, 60 Volts  
N-Channel D2PAK, TO-220  
Features  
http://onsemi.com  
• Low R  
DS(on)  
• High Current Capability  
• Avalanche Energy Specified  
• These are Pb−Free Devices  
I
MAX  
D
V
R
MAX  
(Note 1)  
(BR)DSS  
DS(ON)  
60 V  
6.0 mW @ 10 V  
120 A  
Applications  
• Power Supplies  
• Converters  
• Power Motor Controls  
• Bridge Circuits  
N−Channel  
D
MAXIMUM RATINGS (T = 25°C Unless otherwise specified)  
J
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
60  
Unit  
V
G
V
DSS  
S
Gate−to−Source Voltage − Continuous  
V
$20  
30  
V
GS  
GS  
Gate−to−Source Voltage − Nonrepetitive  
(T < 10 ms)  
P
V
V
4
Continuous Drain  
Current R  
Steady  
State  
T
= 25°C  
= 100°C  
= 25°C  
I
120  
85  
A
C
C
D
4
q
JC  
T
(Note 1)  
C
1
2
Power Dissipation  
Steady  
State  
T
P
215  
W
D
3
R
q
JC  
(Note 1)  
2
TO−220AB  
CASE 221A  
STYLE 5  
D PAK  
Pulsed Drain Current  
t = 10 ms  
p
I
260  
A
DM  
CASE 418B  
STYLE 2  
1
2
Operating and Storage Temperature Range  
T , T  
−55 to  
+175  
°C  
J
stg  
3
MARKING DIAGRAMS  
& PIN ASSIGNMENTS  
Source Current (Body Diode)  
I
60  
A
S
Single Pulse Drain−to−Source Avalanche  
E
AS  
735  
mJ  
4
4
Energy − Starting T = 25°C  
Drain  
J
Drain  
(V = 50 V , V = 10 V , I  
= 70 A,  
DD  
dc GS  
G
dc L(pk)  
L = 0.3 mH, R = 25 W)  
Lead Temperature for Soldering  
Purposes, 1/8″ from Case for 10 Seconds  
T
260  
°C  
L
5426N  
AYWW  
5426N  
AYWW  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Max  
Unit  
°C/W  
2
1
Gate  
3
1
Gate  
3
Drain  
Junction−to−Case (Drain)  
Steady State (Note 1)  
R
q
JC  
0.7  
Source  
Source  
2
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Surface mounted on FR4 board using 1 sq in pad size,  
Drain  
G
A
Y
= Pb−Free Device  
= Assembly Location  
= Year  
(Cu Area 1.127 sq in [1 oz] including traces).  
WW  
= Work Week  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
©
Semiconductor Components Industries, LLC, 2008  
1
Publication Order Number:  
November, 2008 − Rev. 0  
NTB5426N/D  
 
1234567

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