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NTB52N10G

更新时间： 2024-01-30 22:30:41
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
8页 79K
描述
N-Channel Enhancement−Mode D2PAK

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NTB52N10G 数据手册

 浏览型号NTB52N10G的Datasheet PDF文件第2页浏览型号NTB52N10G的Datasheet PDF文件第3页浏览型号NTB52N10G的Datasheet PDF文件第4页浏览型号NTB52N10G的Datasheet PDF文件第5页浏览型号NTB52N10G的Datasheet PDF文件第6页浏览型号NTB52N10G的Datasheet PDF文件第7页 
NTB52N10  
Power MOSFET  
52 Amps, 100 Volts  
N−Channel Enhancement−Mode D2PAK  
http://onsemi.com  
Features  
• Source−to−DrainDiode Recovery Time Comparable to a Discrete  
Fast Recovery Diode  
V
R
DS(ON)  
TYP  
I MAX  
D
DSS  
• Avalanche Energy Specified  
100 V  
30 mW @ 10 V  
52 A  
• I  
and R  
Specified at Elevated Temperature  
DSS  
DS(on)  
2
• Mounting Information Provided for the D PAK Package  
• Pb−Free Packages are Available  
N−Channel  
D
Typical Applications  
• PWM Motor Controls  
• Power Supplies  
• Converters  
G
S
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
MARKING DIAGRAM  
& PIN ASSIGNMENT  
Rating  
Symbol  
Value  
100  
Unit  
Drain−to−Source Voltage  
V
Vdc  
Vdc  
Vdc  
DSS  
4
Drain−to−Source Voltage (R = 1.0 MW)  
V
V
100  
GS  
DGR  
Drain  
Gate−to−Source Voltage  
− Continuous  
4
V
"20  
"40  
GS  
NTB  
52N10G  
AYWW  
− Non−Repetitive (t v10 ms)  
p
1
2
3
GSM  
Drain Current  
Adc  
− Continuous @ T = 25°C  
I
52  
40  
156  
A
A
2
D
D PAK  
− Continuous @ T = 100°C  
I
D
CASE 418B  
STYLE 2  
− Pulsed (Note 1)  
I
1
2
3
DM  
Gate Drain Source  
Total Power Dissipation @ T = 25°C  
P
178  
1.43  
2.0  
W
W/°C  
W
A
D
Derate above 25°C  
Total Power Dissipation @ T = 25°C (Note 2)  
A
NTB52N10 = Device Code  
Operating and Storage Temperature Range  
T , T  
−55 to  
+150  
°C  
A
Y
= Assembly Location  
= Year  
J
stg  
WW  
G
= Work Week  
= Pb−Free Package  
Single Pulse Drain−to−Source Avalanche  
E
800  
mJ  
AS  
Energy − Starting T = 25°C  
J
(V = 50 Vdc, V = 10 Vdc,  
DD  
GS  
I
= 40 A, L = 1.0 mH, R = 25 W)  
L(pk)  
G
ORDERING INFORMATION  
Thermal Resistance  
− Junction−to−Case  
°C/W  
†
R
R
R
0.7  
62.5  
50  
Device  
Package  
Shipping  
q
JC  
JA  
JA  
− Junction−to−Ambient  
− Junction−to−Ambient (Note 2)  
q
q
2
NTB52N10  
D PAK  
50 Units / Rail  
50 Units / Rail  
2
NTB52N10G  
D PAK  
Maximum Lead Temperature for Soldering  
Purposes, 1/8in from case for 10 seconds  
T
260  
°C  
L
(Pb−Free)  
2
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
NTB52N10T4  
D PAK  
800 / Tape & Reel  
800 / Tape & Reel  
2
NTB52N10T4G  
D PAK  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
1. Pulse Test: Pulse Width = 10 ms, Duty Cycle = 2%.  
2. When surface mounted to an FR4 board using the minimum recommended  
2
pad size, (Cu. Area 0.412 in ).  
©
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
August, 2005 − Rev. 3  
NTB52N10/D  
 
12345678

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NTB52N10G 替代型号

型号 品牌 替代类型 描述 数据表
NTB6412ANT4G ONSEMI

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NTB52N10T4G ONSEMI

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 N-Channel Enhancement−Mode D2PAK

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