Datasheet > NTB45N06T4G

NTB45N06T4G

更新时间： 2024-01-30 23:47:14

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
9页	69K
描述
Power MOSFET 45 Amps, 60 Volts

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数据手册
替代型号

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NTB45N06T4G 数据手册

NTP45N06, NTB45N06

Power MOSFET

45 Amps, 60 Volts

N–Channel TO–220 and D PAK

Designed for low voltage, high speed switching applications in

power supplies, converters and power motor controls and bridge

circuits.

http://onsemi.com

Features

45 AMPERES

60 VOLTS

• Higher Current Rating

• Lower R

• Lower V

• Lower Capacitances

• Lower Total Gate Charge

DS(on)

= 26 mΩ

DS(on)

N–Channel

• Tighter V

Specification

• Lower Diode Reverse Recovery Time

• Lower Reverse Recovery Stored Charge

Typical Applications

• Power Supplies

• Converters

• Power Motor Controls

• Bridge Circuits

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

D PAK

TO–220AB

CASE 418B

STYLE 2

CASE 221A

STYLE 5

Rating

Symbol Value Unit

Drain–to–Source Voltage

Vdc

DSS

DGR

Drain–to–Gate Voltage (R

= 10 MΩ)

MARKING DIAGRAMS

& PIN ASSIGNMENTS

Gate–to–Source Voltage

– Continuous

"20

"30

– Non–Repetitive (t v10 ms)

Drain

Drain Current

– Continuous @ T = 25°C

Drain

150

Adc

Apk

– Continuous @ T = 100°C

– Single Pulse (t v10 µs)

NTB45N06

LLYWW

Total Power Dissipation @ T = 25°C

Derate above 25°C

Total Power Dissipation @ T = 25°C (Note 1.)

Total Power Dissipation @ T = 25°C (Note 2.)

125

0.83

3.2

W/°C

NTP45N06

LLYWW

2.4

Gate

Source

Operating and Storage Temperature Range

Single Pulse Drain–to–Source Avalanche

T , T

J stg

–55 to

+175

°C

Drain

Gate

Source

240

NTx45N06 = Device Code

Drain

Energy – Starting T = 25°C

= Location Code

= Year

= Work Week

= 50 Vdc, V

= 10 Vdc, RG = 25 Ω,

= 40 A, L = 0.3 mH, V

= 60 Vdc)

L(pk)

1. When surface mounted to an FR4 board using 1″ pad size,

(Cu Area 1.127 in ).

ORDERING INFORMATION

2. When surface mounted to an FR4 board using the minimum recommended

pad size, (Cu Area 0.412 in ).

Device

Package

Shipping

NTP45N06

NTB45N06

NTB45N06T4

TO–220AB

50 Units/Rail

D PAK

800/Tape & Reel

Semiconductor Components Industries, LLC, 2001

Publication Order Number:

March, 2001 – Rev. 0

NTP45N06/D

12 3 4 5 6 7...9

中文翻译

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NTB45N06T4G 替代型号

型号	品牌	替代类型	描述	数据表
NTB45N06LT4G	ONSEMI	类似代替	45 Amps, 60 Volts, Logic Level, N−Channel TO−220 and D2PAK
NTB45N06LG	ONSEMI	类似代替	45 Amps, 60 Volts, Logic Level, N−Channel TO−220 and D2PAK
NTB45N06	ONSEMI	类似代替	Power MOSFET 45 Amps, 60 Volts

与NTB45N06T4G相关器件

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NTB52N10	ONSEMI	获取价格	N-Channel Enhancement−Mode D2PAK
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NTB52N10T4	ONSEMI	获取价格	N-Channel Enhancement−Mode D2PAK
NTB52N10T4G	ONSEMI	获取价格	N-Channel Enhancement−Mode D2PAK
NTB5404N	ONSEMI	获取价格	Power MOSFET 40 V, 136 A, Single N−Channel, D2PAK & TO−220
NTB5404NT4G	ONSEMI	获取价格	Power MOSFET 40 V, 136 A, Single N−Channel, D2PAK & TO−220
NTB5405N	ONSEMI	获取价格	Power MOSFET 40 V, 116 A, Single N−Channel, D2PAK
NTB5405NG	ONSEMI	获取价格	Power MOSFET 40 V, 116 A, Single N−Channel, D2PAK
NTB5405NT4G	ONSEMI	获取价格	Power MOSFET 40 V, 116 A, Single N−Channel, D2PAK
NTB5411N	ONSEMI	获取价格	Power MOSFET 80 Amps, 60 Volts N-Channel D2PAK, TO-220

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