MMBT5401M3
High Voltage Transistor
PNP Silicon
The MMBT5401M3 device is a spin−off of our popular SOT−23
three−leaded device. It is designed for general purpose amplifier
applications and is housed in the SOT−723 surface mount package.
This device is ideal for low−power surface mount applications where
board space is at a premium.
www.onsemi.com
Features
SOT−723
CASE 631AA
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
COLLECTOR
3
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
1
BASE
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Symbol
Value
−150
−160
−5.0
−60
Unit
Vdc
2
V
CEO
V
CBO
V
EBO
EMITTER
Vdc
Vdc
MARKING DIAGRAM
Collector Current − Continuous
I
C
mAdc
Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
RJ M
1
THERMAL CHARACTERISTICS
RJ
M
= Specific Device Code
= Date Code
Characteristic
Symbol
Max
Unit
Total Device Dissipation
P
130
mW
D
FR−5 Board (Note 1)
T = 25°C
A
Derate Above 25°C
1.0
mW/°C
°C/W
ORDERING INFORMATION
Thermal Resistance,
Junction−to−Ambient (Note 1)
R
470
†
q
JA
Device
Shipping
Package
MMBT5401M3T5G
8000 / Tape &
Reel
SOT−723
(Pb−Free)
Junction and Storage Temperature
T , T
−55 to +150
°C
J
stg
2
1. FR−5 @ 100 mm , 1.0 oz. copper traces, still air.
NSVMMBT5401M3T5G
8000 / Tape &
Reel
SOT−723
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2017
1
Publication Order Number:
June, 2019 − Rev. 1
MMBT5401M3/D