5秒后页面跳转
NST846BF3T5G PDF预览

NST846BF3T5G

更新时间: 2024-10-28 06:00:47
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
4页 110K
描述
NPN General Purpose Transistor

NST846BF3T5G 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-F3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
Factory Lead Time:1 week风险等级:1.58
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:65 V
配置:SINGLE最小直流电流增益 (hFE):200
JESD-30 代码:R-PDSO-F3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):0.347 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin (Sn)
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):100 MHz

NST846BF3T5G 数据手册

 浏览型号NST846BF3T5G的Datasheet PDF文件第2页浏览型号NST846BF3T5G的Datasheet PDF文件第3页浏览型号NST846BF3T5G的Datasheet PDF文件第4页 
NST846BF3T5G  
NPN General Purpose  
Transistor  
The NST846BF3T5G device is a spinoff of our popular  
SOT23/SOT323/SOT563 threeleaded device. It is designed for  
general purpose amplifier applications and is housed in the SOT1123  
surface mount package. This device is ideal for lowpower surface  
mount applications where board space is at a premium.  
http://onsemi.com  
COLLECTOR  
3
Features  
h , 200450  
FE  
Low V  
, 0.25 V  
1
CE(sat)  
BASE  
Reduces Board Space  
This is a HalideFree Device  
This is a PbFree Device  
2
EMITTER  
NST846BF3T5G  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
65  
Unit  
Vdc  
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
Collector Current Continuous  
V
CEO  
3
V
CBO  
80  
Vdc  
2
1
V
EBO  
6.0  
Vdc  
SOT1123  
CASE 524AA  
STYLE 1  
I
C
100  
mAdc  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Total Device Dissipation, T = 25°C  
Derate above 25°C  
P
290  
2.3  
mW  
mW/°C  
MARKING DIAGRAM  
A
D
(Note 1)  
Thermal Resistance,  
JunctiontoAmbient  
R
432  
°C/W  
q
V M  
JA  
(Note 1)  
Total Device Dissipation, T = 25°C  
Derate above 25°C  
P
347  
2.8  
mW  
mW/°C  
A
D
V
M
= Device Code  
= Date Code  
(Note 2)  
Thermal Resistance,  
JunctiontoAmbient  
R
360  
°C/W  
°C/W  
°C  
q
JA  
(Note 2)  
Thermal Resistance,  
JunctiontoLead 3  
R
Y
143  
JL  
ORDERING INFORMATION  
(Note 2)  
Device  
NST846BF3T5G  
Package  
Shipping  
Junction and Storage Temperature Range  
T , T  
J
55 to  
+150  
stg  
SOT1123 8000/Tape & Reel  
(PbFree)  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
2
2
1. 100 mm 1 oz, copper traces.  
2. 500 mm 1 oz, copper traces.  
©
Semiconductor Components Industries, LLC, 2009  
1
Publication Order Number:  
January, 2009 Rev. 0  
NST846BF3/D  
 

NST846BF3T5G 替代型号

型号 品牌 替代类型 描述 数据表
SBC846BLT3G ONSEMI

功能相似

General Purpose Transistors
SBC846BLT1G ONSEMI

功能相似

General Purpose Transistors
BC846BM3T5G ONSEMI

功能相似

General Purpose Transistor NPN Silicon

与NST846BF3T5G相关器件

型号 品牌 获取价格 描述 数据表
NST846BMX2T5G ONSEMI

获取价格

100 mA, 65 V, NPN Bipolar Transistor in SOT-883
NST846MTWFTBG ONSEMI

获取价格

General Purpose TransistorsNPN, 65 V, 100 mA
NST847AMX2T5G ONSEMI

获取价格

Small Signal Bipolar Transistor
NST847BDP6T5G ONSEMI

获取价格

Dual General Purpose Transistor
NST847BF3T5G ONSEMI

获取价格

NPN General Purpose Transistor
NST847BMX2T5G ONSEMI

获取价格

Small Signal Bipolar Transistor
NST847BPDP6T5G ONSEMI

获取价格

Dual Complementary General Purpose Transistor
NST848BF3T5G ONSEMI

获取价格

NPN General Purpose Transistor
NST856BF3T5G ONSEMI

获取价格

PNP General Purpose Transistor
NST856MTWFTBG ONSEMI

获取价格

General Purpose Transistors PNP, 65 V, 100 mA