Datasheet > NSTB1005DXV5_04

NSTB1005DXV5_04

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
6页	63K
描述
Dual Common Base-Collector Bias Resistor Transistors

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中文翻译

获取价格

数据手册

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NSTB1005DXV5_04 数据手册

NSTB1005DXV5T1,

NSTB1005DXV5T5

Preferred Devices

Dual Common

Base−Collector Bias

Resistor Transistors

http://onsemi.com

NPN and PNP Silicon Surface Mount

Transistors with Monolithic Bias

Resistor Network

The BRT (Bias Resistor Transistor) contains a single transistor with

a monolithic bias network consisting of two resistors; a series base

resistor and a base−emitter resistor. These digital transistors are

designed to replace a single device and its external resistor bias

network. The BRT eliminates these individual components by

integrating them into a single device. The NSTB1005DXV5T1

contains two complementary BRT devices are housed in the SOT−553

package which is ideal for low power surface mount applications

where board space is at a premium.

• Simplifies Circuit Design

• Reduces Board Space

• Reduces Component Count

• Available in 8 mm, 7 inch Tape and Reel

• Lead Free

SOT−553

CASE 463B

MARKING DIAGRAM

MAXIMUM RATINGS (T = 25°C unless otherwise noted, common for Q

and Q , − minus sign for Q (PNP) omitted)

Rating

Symbol

Value

Unit

UC D

Collector-Base Voltage

Collector-Emitter Voltage

Collector Current

Vdc

CBO

CEO

UC = Specific Device Code

= Date Code

100

mAdc

THERMAL CHARACTERISTICS

Characteristic

(One Junction Heated)

Symbol

Max

Unit

ORDERING INFORMATION

Total Device Dissipation

†

Device

Package

Shipping

357 (Note 1)

2.9 (Note 1)

mW/°C

T = 25°C

NSTB1005DXV5T1 SOT−553

4 mm pitch

Derate above 25°C

4000/Tape & Reel

Thermal Resistance −

Junction-to-Ambient

350 (Note 1)

°C/W

NSTB1005DXV5T5 SOT−553

2 mm pitch

8000/Tape & Reel

Characteristic

(Both Junctions Heated)

Symbol

Max

Unit

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Total Device Dissipation

T = 25°C

Derate above 25°C

500 (Note 1)

4.0 (Note 1)

mW/°C

Thermal Resistance −

Junction-to-Ambient

250 (Note 1)

−55 to +150

°C/W

Preferred devices are recommended choices for future use

and best overall value.

Junction and Storage Temperature

1. FR−4 @ Minimum Pad

T , T

J stg

°C

Semiconductor Components Industries, LLC, 2004

Publication Order Number:

March, 2004 − Rev. 0

NSTB1005DXV5/D

12 3 4 5 6

中文翻译

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与NSTB1005DXV5_04相关器件

型号	品牌	获取价格	描述	数据表
NSTB1005DXV5T1	ONSEMI	获取价格	Dual Common Base-Collector Bias Resistor Transistors
NSTB1005DXV5T1G	ONSEMI	获取价格	Dual Common Base-Collector Bias Resistor Transistors
NSTB1005DXV5T5	ONSEMI	获取价格	Dual Common Base-Collector Bias Resistor Transistors
NSTB1010XV5T1	ONSEMI	获取价格	100mA, 50V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, CASE 463B-01, 5 PIN
NSTB1010XV5T5	ONSEMI	获取价格	100mA, 50V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, CASE 463B-01, 5 PIN
NSTB60ADW1T1/D	ETC	获取价格	PNP General Purpose and NPN Bias Resistor Transistor Combination
NSTB60BDW1T1	ONSEMI	获取价格	PNP General Purpose and NPN Bias Resistor Transistor Combination
NSTB60BDW1T1/D	ONSEMI	获取价格	PNP General Purpose and NPN Bias Resistor Transistor combination
NSTB60BDW1T1G	ONSEMI	获取价格	PNP General Purpose and NPN Bias Resistor
NSTE184M63V76X142F	NICHICON	获取价格	CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 63V, 180000uF, CHASSIS MOUNT, RADI

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