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NSTB1010XV5T5

更新时间： 2024-02-04 21:09:12
品牌 Logo 应用领域
安森美 - ONSEMI 开关光电二极管晶体管
页数 文件大小 规格书
6页 53K
描述
100mA, 50V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, CASE 463B-01, 5 PIN

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中文翻译

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NSTB1010XV5T5 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Obsolete包装说明：SMALL OUTLINE, R-PDSO-F5
针数：5Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.92
其他特性：BUILT IN BIAS RESISTOR RATIO 1最大集电极电流 (IC)：0.1 A
集电极-发射极最大电压：50 V配置：CASCADED, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)：35JESD-30 代码：R-PDSO-F5
JESD-609代码：e0元件数量：2
端子数量：5最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：225
极性/信道类型：NPN AND PNP认证状态：Not Qualified
表面贴装：YES端子面层：TIN LEAD
端子形式：FLAT端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

NSTB1010XV5T5 数据手册

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NSTB1010XV5T5  
Preferred Device  
Product Preview  
Dual Common  
Base−Collector Bias  
Resistor Transistors  
http://onsemi.com  
NPN and PNP Silicon Surface Mount  
Transistors with Monolithic Bias  
Resistor Network  
3
2
1
R1  
R2  
The BRT (Bias Resistor Transistor) contains a single transistor with  
a monolithic bias network consisting of two resistors; a series base  
resistor and a base−emitter resistor. These digital transistors are  
designed to replace a single device and its external resistor bias  
network. The BRT eliminates these individual components by  
integrating them into a single device. In the NSTB1010XV5T5, two  
complementary BRT devices are housed in the SOT−553 package  
which is ideal for low power surface mount applications where board  
space is at a premium.  
Q2  
R2  
Q1  
R1  
4
5
MARKING  
DIAGRAM  
• Simplifies Circuit Design  
5
5
• Reduces Board Space  
1
• Reduces Component Count  
• Available in 8 mm, 7 inch Tape and Reel  
• Pb−Free Package May be Available  
US D  
SOT−553  
CASE 463B  
1
US = Specific Device Code  
= Date Code  
D
MAXIMUM RATINGS (T = 25°C unless otherwise noted, common for Q  
A
1
and Q , − minus sign for Q (PNP) omitted)  
2
1
Rating  
Symbol  
Value  
50  
Unit  
ORDERING INFORMATION  
Collector-Base Voltage  
Collector-Emitter Voltage  
Collector Current  
V
CBO  
V
CEO  
Vdc  
Vdc  
Device  
Package  
Shipping†  
50  
NSTB1010XV5T1 SOT−553  
4 mm pitch  
I
C
100  
mAdc  
4000/Tape & Reel  
THERMAL CHARACTERISTICS  
NSTB1010XV5T5 SOT−553  
2 mm pitch  
Characteristic  
8000/Tape & Reel  
(One Junction Heated)  
Symbol  
Max  
Unit  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Total Device Dissipation  
T = 25°C  
Derate above 25°C  
P
D
357 (Note 1)  
2.9 (Note 1)  
mW  
mW/°C  
A
Thermal Resistance −  
Junction-to-Ambient  
R
350 (Note 1)  
°C/W  
Preferred devices are recommended choices for future use  
and best overall value.  
q
JA  
Characteristic  
(Both Junctions Heated)  
Symbol  
Max  
Unit  
Total Device Dissipation  
P
D
T = 25°C  
Derate above 25°C  
500 (Note 1)  
4.0 (Note 1)  
mW  
mW/°C  
A
Thermal Resistance −  
Junction-to-Ambient  
R
250 (Note 1)  
°C/W  
°C  
q
JA  
Junction and Storage Temperature T , T  
−55 to +150  
J
stg  
1. FR−4 @ Minimum Pad.  
This document contains information on a product under development. ON Semiconductor  
reserves the right to change or discontinue this product without notice.  
Semiconductor Components Industries, LLC, 2004  
1
Publication Order Number:  
January, 2004 − Rev. P0  
NSTB1010XV5/D  
 
123456

中文翻译

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NSTE564M25V76X142F NICHICON

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