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NSTB60BDW1T1/D PDF预览

NSTB60BDW1T1/D

更新时间: 2024-09-16 23:54:35
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
8页 85K
描述
PNP General Purpose and NPN Bias Resistor Transistor combination

NSTB60BDW1T1/D 数据手册

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NSTB60BDW1T1  
PNP General Purpose and  
NPN Bias Resistor  
Transistor Combination  
Simplifies Circuit Design  
Reduces Board Space  
http://onsemi.com  
Reduces Component Count  
Available in 8 mm, 7 inch/3000 Unit Tape and Reel  
(3)  
Q
(2)  
(1)  
ESD Rating – Human Body Model: Class 1B  
ESD Rating – Machine Model: Class B  
2
Q
1
MAXIMUM RATINGS  
(T = 25°C unless otherwise noted, common for Q and Q )  
A
R
2
1
2
R
1
Rating  
Symbol  
Q
Q
Unit  
Vdc  
1
2
(4)  
(5)  
4
(6)  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter–Base Voltage  
V
CEO  
V
CBO  
V
EBO  
–50  
–50  
50  
50  
Vdc  
5
–6.0  
5.0  
150  
Vdc  
6
Collector Current – Continuous  
I
C
–150  
mAdc  
3
2
1
THERMAL CHARACTERISTICS  
SOT–363  
Characteristic  
CASE 419B  
STYLE 1  
(One Junction Heated)  
Symbol  
Max  
Unit  
Total Device Dissipation  
T = 25°C  
Derate above 25°C  
P
D
187 (Note 1)  
256 (Note 2)  
1.5 (Note 1)  
2.0 (Note 2)  
mW  
A
mW/°C  
°C/W  
MARKING DIAGRAM  
Thermal Resistance –  
Junction-to-Ambient  
R
670 (Note 1)  
490 (Note 2)  
θ
JA  
d
71  
Characteristic  
(Both Junctions Heated)  
Symbol  
Max  
Unit  
Total Device Dissipation  
P
250 (Note 1)  
385 (Note 2)  
2.0 (Note 1)  
3.0 (Note 2)  
mW  
D
71 = Specific Device Code  
T = 25°C  
A
d
= Date Code  
Derate above 25°C  
mW/°C  
°C/W  
°C/W  
°C  
Thermal Resistance –  
Junction-to-Ambient  
R
493 (Note 1)  
325 (Note 2)  
θ
JA  
JL  
ORDERING INFORMATION  
Thermal Resistance –  
Junction-to-Lead  
R
188 (Note 1)  
208 (Note 2)  
θ
Device  
Package  
Shipping  
Junction and Storage Temperature T , T  
–55 to +150  
NSTB60BDW1T1 SOT–363 3000/Tape & Reel  
J
stg  
1. FR–4 @ Minimum Pad  
2. FR–4 @ 1.0 x 1.0 inch Pad  
Semiconductor Components Industries, LLC, 2002  
1
Publication Order Number:  
June, 2002 – Rev. 2  
NSTB60BDW1T1/D  

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