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NSTB1005DXV5T1G PDF预览

NSTB1005DXV5T1G

更新时间: 2024-10-28 11:57:23
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
5页 108K
描述
Dual Common Base-Collector Bias Resistor Transistors

NSTB1005DXV5T1G 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-F5针数:5
Reach Compliance Code:compliantECCN代码:EAR99
Factory Lead Time:17 weeks风险等级:5.52
其他特性:BUILT-IN BIAS RESISTOR RATIO IS 1最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:COMPLEX
最小直流电流增益 (hFE):80JESD-30 代码:R-PDSO-F5
JESD-609代码:e3湿度敏感等级:1
元件数量:2端子数量:5
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN AND PNP
认证状态:Not Qualified表面贴装:YES
端子面层:Tin (Sn)端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

NSTB1005DXV5T1G 数据手册

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NSTB1005DXV5T1G  
Dual Common  
Base-Collector Bias  
Resistor Transistors  
NPN and PNP Silicon Surface Mount  
Transistors with Monolithic Bias  
Resistor Network  
http://onsemi.com  
3
2
1
The BRT (Bias Resistor Transistor) contains a single transistor with  
a monolithic bias network consisting of two resistors; a series base  
resistor and a baseemitter resistor. These digital transistors are  
designed to replace a single device and its external resistor bias  
network. The BRT eliminates these individual components by  
integrating them into a single device. The NSTB1005DXV5T1  
contains two complementary BRT devices are housed in the SOT553  
package which is ideal for low power surface mount applications  
where board space is at a premium.  
R1  
R2  
Q2  
R2  
Q1  
R1  
4
5
Features  
Simplifies Circuit Design  
Reduces Board Space  
Reduces Component Count  
Available in 8 mm, 7 inch Tape and Reel  
This is a PbFree Device  
5
1
SOT553  
CASE 463B  
MARKING DIAGRAM  
MAXIMUM RATINGS (T = 25°C unless otherwise noted, common for Q  
A
1
and Q , minus sign for Q (PNP) omitted)  
2
1
5
Rating  
Symbol  
Value  
50  
Unit  
UC M G  
G
Collector-Base Voltage  
Collector-Emitter Voltage  
Collector Current  
V
CBO  
V
CEO  
Vdc  
Vdc  
1
50  
UC = Specific Device Code  
I
C
100  
mAdc  
M
= Date Code  
G
= PbFree Package  
THERMAL CHARACTERISTICS  
(Note: Microdot may be in either location)  
Characteristic  
(One Junction Heated)  
Symbol  
Max  
Unit  
Total Device Dissipation  
P
D
ORDERING INFORMATION  
357  
2.9  
mW  
mW/°C  
T = 25°C (Note 1)  
A
Derate above 25°C (Note 1)  
Device  
Package  
Shipping  
Thermal Resistance −  
Junction-to-Ambient (Note 1)  
R
350  
°C/W  
q
JA  
NSTB1005DXV5T1G SOT553  
(PbFree)  
4000/Tape &  
Reel  
Characteristic  
(Both Junctions Heated)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
Symbol  
Max  
Unit  
Total Device Dissipation  
T = 25°C (Note 1)  
Derate above 25°C (Note 1)  
P
D
500  
4.0  
mW  
mW/°C  
A
Thermal Resistance −  
R
250  
°C/W  
q
JA  
Junction-to-Ambient (Note 1)  
Junction and Storage Temperature  
T , T  
55 to +150  
°C  
J
stg  
1. FR4 @ Minimum Pad  
© Semiconductor Components Industries, LLC, 2010  
1
Publication Order Number:  
October, 2010 Rev. 1  
NSTB1005DXV5/D  
 

NSTB1005DXV5T1G 替代型号

型号 品牌 替代类型 描述 数据表
NSTB1005DXV5T1 ONSEMI

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