NST846BMX2,
NST847AMX2,
NST847BMX2
Product Preview
General Purpose
Transistors
www.onsemi.com
NPN Silicon
Features
COLLECTOR
3
• Moisture Sensitivity Level: 1
• ESD Rating − Human Body Model: > 4000 V
ESD Rating − Machine Model: > 400 V
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
1
BASE
2
EMITTER
MAXIMUM RATINGS
3
Rating
Symbol
Value
Unit
1
2
Collector-Emitter Voltage
NST846
NST847
V
CEO
V
CBO
V
EBO
65
45
Vdc
X2DFN3 (1.0x0.6)
CASE 714AC
Collector−Base Voltage
Emitter−Base Voltage
NST846
NST847
80
50
Vdc
Vdc
NST846
NST847
6.0
6.0
MARKING DIAGRAM
Collector Current − Continuous
I
C
100
mAdc
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
XX M
XX = Specific Device Code
THERMAL CHARACTERISTICS
M
= Date Code
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR−5 Board,
P
D
225
mW
(Note 1)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 9 of this data sheet.
T = 25°C
A
Derate above 25°C
1.8
mW/°C
°C/W
Thermal Resistance,
Junction−to−Ambient (Note 1)
R
556
q
JA
Total Device Dissipation
P
D
300
mW
Alumina Substrate (Note 2)
T = 25°C
Derate above 25°C
A
2.4
mW/°C
°C/W
Thermal Resistance,
Junction−to−Ambient (Note 2)
R
417
q
JA
Junction and Storage
Temperature Range
T , T
−55 to
+150
°C
J
stg
1. FR−5 = 1.0 ꢀ 0.75 ꢀ 0.062 in.
2. Alumina = 0.4 ꢀ 0.3 ꢀ 0.024 in 99.5% alumina.
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
© Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
March, 2019 − Rev. P0
NST846BMX2/D