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NST847BMX2T5G

更新时间: 2024-10-28 21:07:47
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
10页 135K
描述
Small Signal Bipolar Transistor

NST847BMX2T5G 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:compliant
风险等级:5.75峰值回流温度(摄氏度):NOT SPECIFIED
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

NST847BMX2T5G 数据手册

 浏览型号NST847BMX2T5G的Datasheet PDF文件第2页浏览型号NST847BMX2T5G的Datasheet PDF文件第3页浏览型号NST847BMX2T5G的Datasheet PDF文件第4页浏览型号NST847BMX2T5G的Datasheet PDF文件第5页浏览型号NST847BMX2T5G的Datasheet PDF文件第6页浏览型号NST847BMX2T5G的Datasheet PDF文件第7页 
NST846BMX2,  
NST847AMX2,  
NST847BMX2  
Product Preview  
General Purpose  
Transistors  
www.onsemi.com  
NPN Silicon  
Features  
COLLECTOR  
3
Moisture Sensitivity Level: 1  
ESD Rating Human Body Model: > 4000 V  
ESD Rating Machine Model: > 400 V  
These Devices are PbFree, Halogen Free/BFR Free and are RoHS  
Compliant  
1
BASE  
2
EMITTER  
MAXIMUM RATINGS  
3
Rating  
Symbol  
Value  
Unit  
1
2
Collector-Emitter Voltage  
NST846  
NST847  
V
CEO  
V
CBO  
V
EBO  
65  
45  
Vdc  
X2DFN3 (1.0x0.6)  
CASE 714AC  
CollectorBase Voltage  
EmitterBase Voltage  
NST846  
NST847  
80  
50  
Vdc  
Vdc  
NST846  
NST847  
6.0  
6.0  
MARKING DIAGRAM  
Collector Current Continuous  
I
C
100  
mAdc  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
XX M  
XX = Specific Device Code  
THERMAL CHARACTERISTICS  
M
= Date Code  
Characteristic  
Symbol  
Max  
Unit  
Total Device Dissipation FR5 Board,  
P
D
225  
mW  
(Note 1)  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 9 of this data sheet.  
T = 25°C  
A
Derate above 25°C  
1.8  
mW/°C  
°C/W  
Thermal Resistance,  
JunctiontoAmbient (Note 1)  
R
556  
q
JA  
Total Device Dissipation  
P
D
300  
mW  
Alumina Substrate (Note 2)  
T = 25°C  
Derate above 25°C  
A
2.4  
mW/°C  
°C/W  
Thermal Resistance,  
JunctiontoAmbient (Note 2)  
R
417  
q
JA  
Junction and Storage  
Temperature Range  
T , T  
55 to  
+150  
°C  
J
stg  
1. FR5 = 1.0 0.75 0.062 in.  
2. Alumina = 0.4 0.3 0.024 in 99.5% alumina.  
This document contains information on a product under development. ON Semiconductor  
reserves the right to change or discontinue this product without notice.  
© Semiconductor Components Industries, LLC, 2019  
1
Publication Order Number:  
March, 2019 Rev. P0  
NST846BMX2/D  
 

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