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NST857BDP6T5G

更新时间: 2024-10-28 06:00:47
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
4页 95K
描述
Dual General Purpose Transistor

NST857BDP6T5G 数据手册

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NST857BDP6T5G  
Dual General Purpose  
Transistor  
The NST857BDP6T5G device is a spinoff of our popular  
SOT23/SOT323/SOT563threeleaded device. It is designed for  
general purpose amplifier applications and is housed in the SOT963  
sixleaded surface mount package. By putting two discrete devices in  
one package, this device is ideal for lowpower surface mount  
applications where board space is at a premium.  
http://onsemi.com  
Features  
(3)  
(2)  
(1)  
Q
h , 220475  
FE  
Low V  
, 0.3 V  
CE(sat)  
Simplifies Circuit Design  
Reduces Board Space  
Reduces Component Count  
This is a PbFree Device  
Q
1
2
(4)  
(5)  
(6)  
NST857BDP6T5G  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
45  
Unit  
Vdc  
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
Collector Current Continuous  
Electrostatic Discharge  
V
CEO  
V
CBO  
V
EBO  
4
5
6
50  
Vdc  
6.0  
100  
Vdc  
3
I
C
mAdc  
2
1
HBM  
MM  
ESD  
Class  
2
B
SOT963  
CASE 527AD  
PLASTIC  
THERMAL CHARACTERISTICS  
Characteristic (Single Heated)  
Symbol  
Max  
Unit  
Total Device Dissipation T = 25°C  
P
D
240  
1.9  
mW  
mW/°C  
MARKING DIAGRAM  
A
Derate above 25°C (Note 1)  
Thermal Resistance, Junction-to-Ambient  
(Note 1)  
R
520  
°C/W  
q
JA  
K M G  
G
Total Device Dissipation T = 25°C  
P
280  
2.2  
mW  
mW/°C  
A
D
1
Derate above 25°C (Note 2)  
Thermal Resistance, Junction-to-Ambient  
(Note 2)  
R
446  
°C/W  
q
JA  
K
M
G
= Device Code  
= Date Code  
= PbFree Package  
Characteristic (Dual Heated) (Note 3)  
Symbol  
Max  
Unit  
(Note: Microdot may be in either location)  
Total Device Dissipation T = 25°C  
P
350  
2.8  
mW  
mW/°C  
A
D
Derate above 25°C (Note 1)  
Thermal Resistance, Junction-to-Ambient  
(Note 1)  
R
357  
°C/W  
q
JA  
ORDERING INFORMATION  
Total Device Dissipation T = 25°C  
P
D
420  
3.4  
mW  
mW/°C  
A
Device  
Package  
Shipping  
Derate above 25°C (Note 2)  
NST857BDP6T5G SOT963 8000/Tape & Reel  
(PbFree)  
Thermal Resistance, Junction-to-Ambient  
(Note 2)  
R
297  
°C/W  
q
JA  
Junction and Storage Temperature Range  
T , T  
55 to  
°C  
J
stg  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
+150  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
2
2
1. FR4 @ 100 mm , 1 oz. copper traces, still air.  
2. FR4 @ 500 mm , 1 oz. copper traces, still air.  
3. Dual heated values assume total power is sum of two equally powered channels.  
© Semiconductor Components Industries, LLC, 2008  
1
Publication Order Number:  
April, 2008 Rev. 0  
NST857BDP6/D  
 

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