Datasheet > NST857BF3T5G

NST857BF3T5G

更新时间： 2024-02-11 19:08:45

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
4页	91K
描述
PNP General Purpose Transistor

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中文翻译

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数据手册
替代型号

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NST857BF3T5G 数据手册

NST857BF3T5G

PNP General Purpose

Transistor

The NST857BF3T5G device is a spin−off of our popular

SOT−23/SOT−323/SOT−563/SOT−963 three−leaded device. It is

designed for general purpose amplifier applications and is housed in

the SOT−1123 surface mount package. This device is ideal for

low−power surface mount applications where board space is at a

premium.

http://onsemi.com

COLLECTOR

Features

• h , 220−475

• Low V

, ≤ −0.3 V

CE(sat)

BASE

• Reduces Board Space

• This is a Pb−Free Device

EMITTER

NST857BF3T5G

MAXIMUM RATINGS

Rating

Symbol

Value

−45

Unit

Vdc

Collector−Emitter Voltage

Collector−Base Voltage

Emitter−Base Voltage

Collector Current − Continuous

CEO

CBO

EBO

−50

Vdc

−5.0

−100

Vdc

mAdc

SOT−1123

CASE 524AA

STYLE 1

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation, T = 25°C

Derate above 25°C

290

2.3

mW/°C

MARKING DIAGRAM

(Note 1)

Thermal Resistance,

Junction−to−Ambient

432

°C/W

5 M

(Note 1)

Total Device Dissipation, T = 25°C

Derate above 25°C

347

2.8

mW/°C

= Device Code

= Date Code

(Note 2)

Thermal Resistance,

Junction−to−Ambient

360

°C/W

°C

(Note 2)

Thermal Resistance,

Junction−to−Lead 3

143

ORDERING INFORMATION

(Note 2)

†

Device

NST857BF3T5G

Package

Shipping

Junction and Storage Temperature Range T , T

−55 to

+150

stg

SOT−1123 8000/Tape & Reel

(Pb−Free)

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

1. 100 mm 1 oz, copper traces.

2. 500 mm 1 oz, copper traces.

Publication Order Number:

April, 2008 − Rev. 0

NST857BF3/D

12 3 4

中文翻译

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NST857BF3T5G 替代型号

型号	品牌	替代类型	描述	数据表
NSVBC857BLT3G	ONSEMI	功能相似	PNP 双极晶体管
SBC857BWT1G	ONSEMI	功能相似	General Purpose Transistors
SBC857BLT1G	ONSEMI	功能相似	General Purpose Transistors

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