5秒后页面跳转
NST857BF3T5G PDF预览

NST857BF3T5G

更新时间: 2022-12-19 12:41:06
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
4页 91K
描述
PNP General Purpose Transistor

NST857BF3T5G 数据手册

 浏览型号NST857BF3T5G的Datasheet PDF文件第2页浏览型号NST857BF3T5G的Datasheet PDF文件第3页浏览型号NST857BF3T5G的Datasheet PDF文件第4页 
NST857BF3T5G  
PNP General Purpose  
Transistor  
The NST857BF3T5G device is a spinoff of our popular  
SOT23/SOT323/SOT563/SOT963 threeleaded device. It is  
designed for general purpose amplifier applications and is housed in  
the SOT1123 surface mount package. This device is ideal for  
lowpower surface mount applications where board space is at a  
premium.  
http://onsemi.com  
COLLECTOR  
3
Features  
h , 220475  
FE  
1
Low V  
, 0.3 V  
CE(sat)  
BASE  
Reduces Board Space  
This is a PbFree Device  
2
EMITTER  
NST857BF3T5G  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
45  
Unit  
Vdc  
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
Collector Current Continuous  
V
CEO  
V
CBO  
V
EBO  
3
50  
Vdc  
2
1
5.0  
100  
Vdc  
I
C
mAdc  
SOT1123  
CASE 524AA  
STYLE 1  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Total Device Dissipation, T = 25°C  
Derate above 25°C  
P
290  
2.3  
mW  
mW/°C  
A
D
MARKING DIAGRAM  
(Note 1)  
Thermal Resistance,  
JunctiontoAmbient  
R
432  
°C/W  
q
JA  
5 M  
(Note 1)  
Total Device Dissipation, T = 25°C  
Derate above 25°C  
P
347  
2.8  
mW  
mW/°C  
A
D
5
M
= Device Code  
= Date Code  
(Note 2)  
Thermal Resistance,  
JunctiontoAmbient  
R
360  
°C/W  
°C/W  
°C  
q
JA  
(Note 2)  
Thermal Resistance,  
JunctiontoLead 3  
R
143  
Y
JL  
ORDERING INFORMATION  
(Note 2)  
Device  
NST857BF3T5G  
Package  
Shipping  
Junction and Storage Temperature Range T , T  
55 to  
+150  
J
stg  
SOT1123 8000/Tape & Reel  
(PbFree)  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
2
2
1. 100 mm 1 oz, copper traces.  
2. 500 mm 1 oz, copper traces.  
© Semiconductor Components Industries, LLC, 2008  
1
Publication Order Number:  
April, 2008 Rev. 0  
NST857BF3/D  
 

NST857BF3T5G 替代型号

型号 品牌 替代类型 描述 数据表
NSVBC857BLT3G ONSEMI

功能相似

PNP 双极晶体管
SBC857BWT1G ONSEMI

功能相似

General Purpose Transistors
SBC857BLT1G ONSEMI

功能相似

General Purpose Transistors

与NST857BF3T5G相关器件

型号 品牌 获取价格 描述 数据表
NST857BMX2T5G ONSEMI

获取价格

Small Signal Bipolar Transistor
NST86 NOVOSENSE

获取价格

NST86是一系列精密 CMOS 集成电路线性模拟输出温度传感器。输入电压范围从2.4V到
NSTB1002DXV5_06 ONSEMI

获取价格

Dual Common Base−Collector Bias Resistor Transistors
NSTB1002DXV5T1 ONSEMI

获取价格

100mA, 50V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, CASE 463B-01, 5 PIN
NSTB1002DXV5T1G ONSEMI

获取价格

Dual Common Base−Collector Bias Resistor Transistors
NSTB1002DXV5T5 ONSEMI

获取价格

100mA, 50V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, CASE 463B-01, 5 PIN
NSTB1002DXV5T5G ONSEMI

获取价格

Dual Common Base−Collector Bias Resistor Transistors
NSTB1005DXV5_04 ONSEMI

获取价格

Dual Common Base-Collector Bias Resistor Transistors
NSTB1005DXV5T1 ONSEMI

获取价格

Dual Common Base-Collector Bias Resistor Transistors
NSTB1005DXV5T1G ONSEMI

获取价格

Dual Common Base-Collector Bias Resistor Transistors