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NSTB1002DXV5T1G

更新时间： 2024-01-07 22:26:15
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
6页 63K
描述
Dual Common Base−Collector Bias Resistor Transistors

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NSTB1002DXV5T1G 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：SMALL OUTLINE, R-PDSO-F5针数：5
Reach Compliance Code：compliantECCN代码：EAR99
Factory Lead Time：1 week风险等级：5.48
其他特性：BUILT IN BIAS RESISTOR RATIO IS 1最大集电极电流 (IC)：0.1 A
集电极-发射极最大电压：50 V配置：CASCADED, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)：30JESD-30 代码：R-PDSO-F5
JESD-609代码：e3湿度敏感等级：1
元件数量：2端子数量：5
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：NPN AND PNP
最大功率耗散 (Abs)：0.5 W认证状态：Not Qualified
子类别：BIP General Purpose Small Signal表面贴装：YES
端子面层：Tin (Sn)端子形式：FLAT
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
标称过渡频率 (fT)：250 MHz最大关闭时间（toff）：300 ns
最大开启时间（吨）：70 nsBase Number Matches：1

NSTB1002DXV5T1G 数据手册

 浏览型号NSTB1002DXV5T1G的Datasheet PDF文件第2页浏览型号NSTB1002DXV5T1G的Datasheet PDF文件第3页浏览型号NSTB1002DXV5T1G的Datasheet PDF文件第4页浏览型号NSTB1002DXV5T1G的Datasheet PDF文件第5页浏览型号NSTB1002DXV5T1G的Datasheet PDF文件第6页 
NSTB1002DXV5T1G,  
NSTB1002DXV5T5G  
Preferred Devices  
Dual Common  
Base−Collector Bias  
Resistor Transistors  
NPN and PNP Silicon Surface Mount  
Transistors with Monolithic Bias  
http://onsemi.com  
3
2
1
Resistor Network  
R1  
R2  
The BRT (Bias Resistor Transistor) contains a single transistor with  
a monolithic bias network consisting of two resistors; a series base  
resistor and a base−emitter resistor. These digital transistors are  
designed to replace a single device and its external resistor bias  
network. The BRT eliminates these individual components by  
integrating them into a single device. In the NSTB1002DXV5T1G  
series, two complementary devices are housed in the SOT−553  
package which is ideal for low power surface mount applications  
where board space is at a premium.  
Q2  
Q1  
R1  
4
5
• Simplifies Circuit Design  
• Reduces Board Space  
5
• Reduces Component Count  
1
SOT−553  
CASE 463B  
• Available in 8 mm, 7 inch Tape and Reel  
• These are Pb−Free Devices  
MAXIMUM RATINGS (T = 25°C unless otherwise noted, common for Q  
A
1
MARKING DIAGRAM  
and Q , − minus sign for Q (PNP) omitted)  
2
1
Value  
Q1  
5
Q2  
50  
50  
Rating  
Symbol  
Unit  
Vdc  
Vdc  
U9 MG  
Collector-Base Voltage  
Collector-Emitter Voltage  
Collector Current  
V
−40  
−40  
G
CBO  
1
V
CEO  
I
−200 100  
mAdc  
C
U9 = Specific Device Code  
M
= Date Code  
= Pb−Free Package  
THERMAL CHARACTERISTICS  
G
Characteristic  
(One Junction Heated)  
(Note: Microdot may be in either location)  
Symbol  
Max  
Unit  
Total Device Dissipation  
T = 25°C  
P
357 (Note 1)  
2.9 (Note 1) mW/°C  
mW  
A
D
Derate above 25°C  
ORDERING INFORMATION  
Thermal Resistance −  
Junction-to-Ambient  
R
q
JA  
350 (Note 1) °C/W  
Device  
Package  
Shipping  
NSTB1002DXV5T1G SOT−553  
4 mm pitch  
Characteristic  
(Both Junctions Heated)  
(Pb−Free) 4000/Tape & Reel  
Symbol  
Max  
Unit  
Total Device Dissipation  
T = 25°C  
P
500 (Note 1)  
4.0 (Note 1)  
mW  
A
D
NSTB1002DXV5T5G SOT−553  
2 mm pitch  
Derate above 25°C  
mW/°C  
(Pb−Free) 8000/Tape & Reel  
Thermal Resistance −  
R
q
JA  
250 (Note 1) °C/W  
Junction-to-Ambient  
Preferred devices are recommended choices for future use  
and best overall value.  
Junction and Storage Temperature  
T , T  
J stg  
−55 to +150 °C  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
1. FR−4 @ Minimum Pad  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
January, 2006 − Rev. 0  
NSTB1002DXV5/D  
 
123456

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