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NST847BPDP6T5G PDF预览

NST847BPDP6T5G

更新时间: 2024-10-28 06:00:47
品牌 Logo 应用领域
安森美 - ONSEMI 晶体小信号双极晶体管光电二极管放大器
页数 文件大小 规格书
7页 102K
描述
Dual Complementary General Purpose Transistor

NST847BPDP6T5G 技术参数

是否无铅:不含铅生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-F6针数:6
Reach Compliance Code:compliantECCN代码:EAR99
Factory Lead Time:1 week风险等级:1.22
Is Samacsys:N最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:45 V配置:SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE):200JESD-30 代码:R-PDSO-F6
JESD-609代码:e3湿度敏感等级:1
元件数量:2端子数量:6
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN AND PNP
最大功率耗散 (Abs):0.42 W认证状态:Not Qualified
子类别:BIP General Purpose Small Signal表面贴装:YES
端子面层:Tin (Sn)端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHzBase Number Matches:1

NST847BPDP6T5G 数据手册

 浏览型号NST847BPDP6T5G的Datasheet PDF文件第2页浏览型号NST847BPDP6T5G的Datasheet PDF文件第3页浏览型号NST847BPDP6T5G的Datasheet PDF文件第4页浏览型号NST847BPDP6T5G的Datasheet PDF文件第5页浏览型号NST847BPDP6T5G的Datasheet PDF文件第6页浏览型号NST847BPDP6T5G的Datasheet PDF文件第7页 
NST847BPDP6T5G  
Dual Complementary  
General Purpose Transistor  
The NST847BPDP6T5G device is a spinoff of our popular  
SOT23/SOT323/SOT563 threeleaded device. It is designed for  
general purpose amplifier applications and is housed in the SOT963  
sixleaded surface mount package. By putting two discrete devices in  
one package, this device is ideal for lowpower surface mount  
applications where board space is at a premium.  
http://onsemi.com  
Features  
(3)  
(2)  
(1)  
Q
h , 200450  
FE  
Low V  
, 0.3 V  
CE(sat)  
Q
1
2
Simplifies Circuit Design  
Reduces Board Space  
(4)  
(5)  
(6)  
Reduces Component Count  
This is a PbFree Device  
NST847BPDP6T5G*  
*Q1 PNP  
Q2 NPN  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
45  
Unit  
Vdc  
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
Collector Current Continuous  
Electrostatic Discharge  
V
CEO  
CBO  
4
V
50  
Vdc  
5
6
V
EBO  
6.0  
Vdc  
I
C
100  
mAdc  
3
2
1
HBM  
MM  
ESD  
Class  
2
B
SOT963  
CASE 527AD  
PLASTIC  
THERMAL CHARACTERISTICS  
Characteristic (Single Heated)  
Symbol  
Max  
Unit  
Total Device Dissipation T = 25°C  
P
D
240  
1.9  
mW  
mW/°C  
A
MARKING DIAGRAM  
Derate above 25°C (Note 1)  
Thermal Resistance, Junction-to-Ambient  
(Note 1)  
R
520  
°C/W  
q
JA  
A M G  
G
Total Device Dissipation T = 25°C  
P
280  
2.2  
mW  
mW/°C  
A
D
1
Derate above 25°C (Note 2)  
Thermal Resistance, Junction-to-Ambient  
(Note 2)  
R
446  
°C/W  
q
JA  
A
M
G
= Device Code  
= Date Code  
= PbFree Package  
Characteristic (Dual Heated) (Note 3)  
Symbol  
Max  
Unit  
Total Device Dissipation T = 25°C  
P
350  
2.8  
mW  
mW/°C  
A
D
(Note: Microdot may be in either location)  
Derate above 25°C (Note 1)  
Thermal Resistance, Junction-to-Ambient  
(Note 1)  
R
q
JA  
357  
°C/W  
ORDERING INFORMATION  
Total Device Dissipation T = 25°C  
P
D
420  
3.4  
mW  
mW/°C  
A
Device  
Package  
Shipping  
Derate above 25°C (Note 2)  
Thermal Resistance, Junction-to-Ambient  
(Note 2)  
R
q
JA  
297  
°C/W  
NST847BPDP6T5G SOT963 8000/Tape & Reel  
(PbFree)  
Junction and Storage Temperature Range T , T  
55 to  
°C  
J
stg  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
+150  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
2
2
1. FR4 @ 100 mm , 1 oz. copper traces, still air.  
2. FR4 @ 500 mm , 1 oz. copper traces, still air.  
3. Dual heated values assume total power is sum of two equally powered channels  
©
Semiconductor Components Industries, LLC, 2008  
1
Publication Order Number:  
May, 2008 Rev. 0  
NST847BPDP6/D  
 

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