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NST856MTWFTBG PDF预览

NST856MTWFTBG

更新时间: 2024-10-29 11:11:43
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
7页 258K
描述
General Purpose Transistors PNP, 65 V, 100 mA

NST856MTWFTBG 数据手册

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DATA SHEET  
www.onsemi.com  
COLLECTOR  
General Purpose  
Transistors  
PNP, 65 V, 100 mA  
3
1
BASE  
2
EMITTER  
NST856MTWFT  
The NST856MTWFT is designed for general purpose amplifier  
applications. It is housed in an ultracompact DFN10103 with  
wettable flanks, recommended for the automotive industry’s optical  
inspection methods. The transistor is ideal for lowpower surface  
mount applications where board space and reliability are at a premium.  
3
MARKING  
DIAGRAM  
56M  
1
2
Features  
XDFNW3  
CASE 521AC  
Wettable Flank Package for Optimal Automated Optical  
Inspection (AOI)  
NSV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AECQ101  
Qualified and PPAP Capable  
56  
M
= Specific Device Code  
= Month Code  
These Devices are PbFree, Halogen Free/BFR Free and are RoHS  
ORDERING INFORMATION  
Compliant  
Device  
Package  
Shipping  
NST856MTWFTBG  
XDFNW3  
(PbFree)  
3000 / Tape &  
Reel  
MAXIMUM RATINGS (T = 25°C)  
A
Rating  
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
Symbol  
Max  
65  
Unit  
Vdc  
Vdc  
Vdc  
mA  
NSVT856MTWFTBG  
XDFNW3  
(PbFree)  
3000 / Tape &  
Reel  
V
CEO  
V
CBO  
V
EBO  
80  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
5.0  
100  
200  
Collector Current Continuous  
Collector Current Peak  
I
C
I
mA  
CM  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance JunctiontoAmbient  
(Note 1)  
R
191  
°C/W  
q
JA  
Total Power Dissipation per Device  
P
D
650  
mW  
@T = 25°C  
(Note 1)  
A
Junction and Storage Temperature Range  
T , T  
65 to  
+150  
°C  
J
stg  
1. Per JESD517 with standard PCB footprint and 2 oz. Cu.  
© Semiconductor Components Industries, LLC, 2021  
1
Publication Order Number:  
February, 2023 Rev. 1  
NST856MTWFT/D  
 

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