5秒后页面跳转
捷配首页

Datasheet > NST856MTWFTBG
NST856MTWFTBG PDF预览

NST856MTWFTBG

更新时间： 2023-09-03 20:29:27
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
7页 258K
描述
General Purpose Transistors PNP, 65 V, 100 mA

阅读下载

中文翻译

获取价格

NST856MTWFTBG 数据手册

 浏览型号NST856MTWFTBG的Datasheet PDF文件第2页浏览型号NST856MTWFTBG的Datasheet PDF文件第3页浏览型号NST856MTWFTBG的Datasheet PDF文件第4页浏览型号NST856MTWFTBG的Datasheet PDF文件第5页浏览型号NST856MTWFTBG的Datasheet PDF文件第6页浏览型号NST856MTWFTBG的Datasheet PDF文件第7页 
DATA SHEET  
www.onsemi.com  
COLLECTOR  
General Purpose  
Transistors  
PNP, 65 V, 100 mA  
3
1
BASE  
2
EMITTER  
NST856MTWFT  
The NST856MTWFT is designed for general purpose amplifier  
applications. It is housed in an ultra−compact DFN1010−3 with  
wettable flanks, recommended for the automotive industry’s optical  
inspection methods. The transistor is ideal for low−power surface  
mount applications where board space and reliability are at a premium.  
3
MARKING  
DIAGRAM  
56M  
1
2
Features  
XDFNW3  
CASE 521AC  
• Wettable Flank Package for Optimal Automated Optical  
Inspection (AOI)  
• NSV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AEC−Q101  
Qualified and PPAP Capable  
56  
M
= Specific Device Code  
= Month Code  
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
ORDERING INFORMATION  
Compliant  
†
Device  
Package  
Shipping  
NST856MTWFTBG  
XDFNW3  
(Pb−Free)  
3000 / Tape &  
Reel  
MAXIMUM RATINGS (T = 25°C)  
A
Rating  
Collector−Emitter Voltage  
Collector−Base Voltage  
Emitter−Base Voltage  
Symbol  
Max  
−65  
Unit  
Vdc  
Vdc  
Vdc  
mA  
NSVT856MTWFTBG  
XDFNW3  
(Pb−Free)  
3000 / Tape &  
Reel  
V
CEO  
V
CBO  
V
EBO  
−80  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
−5.0  
−100  
200  
Collector Current − Continuous  
Collector Current − Peak  
I
C
I
mA  
CM  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance Junction−to−Ambient  
(Note 1)  
R
191  
°C/W  
q
JA  
Total Power Dissipation per Device  
P
D
650  
mW  
@T = 25°C  
(Note 1)  
A
Junction and Storage Temperature Range  
T , T  
−65 to  
+150  
°C  
J
stg  
1. Per JESD51−7 with standard PCB footprint and 2 oz. Cu.  
© Semiconductor Components Industries, LLC, 2021  
1
Publication Order Number:  
February, 2023 − Rev. 1  
NST856MTWFT/D  
 
1234567

中文翻译

下载PDF

与NST856MTWFTBG相关器件

型号 品牌 获取价格 描述 数据表
NST857AMX2T5G ONSEMI

获取价格

 		Small Signal Bipolar Transistor
NST857BDP6T5G ONSEMI

获取价格

 		Dual General Purpose Transistor
NST857BF3T5G ONSEMI

获取价格

 		PNP General Purpose Transistor
NST857BMX2T5G ONSEMI

获取价格

 		Small Signal Bipolar Transistor
NST86 NOVOSENSE

获取价格

 		NST86是一系列精密 CMOS 集成电路线性模拟输出温度传感器。输入电压范围从2.4V到
NSTB1002DXV5_06 ONSEMI

获取价格

 		Dual Common Base−Collector Bias Resistor Transistors
NSTB1002DXV5T1 ONSEMI

获取价格

 		100mA, 50V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, CASE 463B-01, 5 PIN
NSTB1002DXV5T1G ONSEMI

获取价格

 		Dual Common Base−Collector Bias Resistor Transistors
NSTB1002DXV5T5 ONSEMI

获取价格

 		100mA, 50V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, CASE 463B-01, 5 PIN
NSTB1002DXV5T5G ONSEMI

获取价格

 		Dual Common Base−Collector Bias Resistor Transistors

与NST856MTWFTBG相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证