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NST856BF3T5G

更新时间: 2024-10-28 06:00:47
品牌 Logo 应用领域
安森美 - ONSEMI 晶体小信号双极晶体管光电二极管放大器
页数 文件大小 规格书
4页 111K
描述
PNP General Purpose Transistor

NST856BF3T5G 技术参数

是否无铅:不含铅生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-F3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
Factory Lead Time:1 week风险等级:5.74
Is Samacsys:N最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:65 V配置:SINGLE
最小直流电流增益 (hFE):220JESD-30 代码:R-PDSO-F3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
最大功率耗散 (Abs):0.347 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin (Sn)端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHzBase Number Matches:1

NST856BF3T5G 数据手册

 浏览型号NST856BF3T5G的Datasheet PDF文件第2页浏览型号NST856BF3T5G的Datasheet PDF文件第3页浏览型号NST856BF3T5G的Datasheet PDF文件第4页 
NST856BF3T5G  
PNP General Purpose  
Transistor  
The NST856BF3T5G device is a spinoff of our popular  
SOT23/SOT323/SOT563/SOT963 threeleaded device. It is  
designed for general purpose amplifier applications and is housed in  
the SOT1123 surface mount package. This device is ideal for  
lowpower surface mount applications where board space is at a  
premium.  
http://onsemi.com  
COLLECTOR  
3
Features  
h , 220475  
FE  
1
Low V  
, 0.3 V  
CE(sat)  
BASE  
Reduces Board Space  
This is a HalideFree Device  
This is a PbFree Device  
2
EMITTER  
NST856BF3T5G  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
65  
Unit  
Vdc  
3
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
Collector Current Continuous  
V
V
CEO  
2
1
80  
Vdc  
CBO  
V
EBO  
5.0  
100  
Vdc  
SOT1123  
CASE 524AA  
STYLE 1  
I
C
mAdc  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
MARKING DIAGRAM  
Total Device Dissipation, T = 25°C  
P
D
290  
2.3  
mW  
mW/°C  
A
Derate above 25°C  
(Note 1)  
A M  
Thermal Resistance,  
R
q
JA  
432  
°C/W  
JunctiontoAmbient  
(Note 1)  
A
M
= Device Code  
= Date Code  
Total Device Dissipation, T = 25°C  
Derate above 25°C  
P
347  
2.8  
mW  
mW/°C  
A
D
(Note 2)  
Thermal Resistance,  
JunctiontoAmbient  
R
360  
°C/W  
°C/W  
°C  
q
JA  
(Note 2)  
ORDERING INFORMATION  
Thermal Resistance,  
JunctiontoLead 3  
R
Y
143  
JL  
Device  
NST856BF3T5G  
Package  
Shipping  
(Note 2)  
SOT1123 8000/Tape & Reel  
(PbFree)  
Junction and Storage Temperature Range T , T  
55 to  
+150  
J
stg  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
2
2
1. 100 mm 1 oz, copper traces.  
2. 500 mm 1 oz, copper traces.  
©
Semiconductor Components Industries, LLC, 2009  
1
Publication Order Number:  
January, 2009 Rev. 0  
NST856BF3/D  
 

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