5秒后页面跳转
BC846BM3T5G PDF预览

BC846BM3T5G

更新时间: 2024-11-06 08:49:43
品牌 Logo 应用领域
安森美 - ONSEMI 晶体小信号双极晶体管光电二极管
页数 文件大小 规格书
5页 103K
描述
General Purpose Transistor NPN Silicon

BC846BM3T5G 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-F3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
Factory Lead Time:1 week风险等级:1.55
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:65 V
配置:SINGLE最小直流电流增益 (hFE):200
JESD-30 代码:R-PDSO-F3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN最大功率耗散 (Abs):0.64 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin (Sn)
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHzBase Number Matches:1

BC846BM3T5G 数据手册

 浏览型号BC846BM3T5G的Datasheet PDF文件第2页浏览型号BC846BM3T5G的Datasheet PDF文件第3页浏览型号BC846BM3T5G的Datasheet PDF文件第4页浏览型号BC846BM3T5G的Datasheet PDF文件第5页 
BC846BM3T5G  
General Purpose Transistor  
NPN Silicon  
Moisture Sensitivity Level: 1  
ESD Rating:  
Human Body Model: >4000 V  
Machine Model: >400 V  
http://onsemi.com  
This is a PbFree Device  
COLLECTOR  
3
MAXIMUM RATINGS  
Rating  
1
Symbol  
Value  
65  
Unit  
Vdc  
BASE  
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
Collector Current Continuous  
THERMAL CHARACTERISTICS  
Characteristic  
V
CEO  
V
CBO  
V
EBO  
2
80  
Vdc  
EMITTER  
6.0  
Vdc  
I
C
100  
mAdc  
MARKING  
DIAGRAM  
3
Symbol  
Max  
Unit  
SOT723  
1B M  
Total Device Dissipation FR5 Board  
(Note 1)  
T = 25°C  
A
P
D
265  
mW  
CASE 631AA  
STYLE 1  
2
1
Derate above 25°C  
2.1  
mW/°C  
°C/W  
1B = Specific Device Code  
= Date Code  
Thermal Resistance,  
R
470  
q
JA  
M
Junction to Ambient (Note 1)  
Total Device Dissipation  
P
D
640  
mW  
Alumina Substrate (Note 2)  
ORDERING INFORMATION  
T = 25°C  
A
Device  
BC846BM3T5G  
Package  
Shipping  
Derate above 25°C  
5.1  
mW/°C  
°C/W  
SOT723 8000/Tape & Reel  
(PbFree)  
Thermal Resistance,  
Junction to Ambient (Note 2)  
R
195  
q
JA  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Junction and Storage  
Temperature Range  
T , T  
55 to  
+150  
°C  
J
stg  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. FR5 = 1.0 0.75 0.062 in.  
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.  
© Semiconductor Components Industries, LLC, 2008  
1
Publication Order Number:  
September, 2008 Rev. 1  
BC846BM3/D  
 

BC846BM3T5G 替代型号

型号 品牌 替代类型 描述 数据表
SBC846BLT3G ONSEMI

功能相似

General Purpose Transistors
SBC846BLT1G ONSEMI

功能相似

General Purpose Transistors
NST846BF3T5G ONSEMI

功能相似

NPN General Purpose Transistor

与BC846BM3T5G相关器件

型号 品牌 获取价格 描述 数据表
BC846BMB NEXPERIA

获取价格

65 V, 100 mA NPN general-purpose transistorProduction
BC846B-MR FAIRCHILD

获取价格

TRANSISTOR BC846B MINIREEL 500PCS
BC846BMTF DIOTEC

获取价格

NPN Epitaxial Silicon Transistor
BC846BMTF ONSEMI

获取价格

NPN Epitaxial Silicon Transistor
BC846BMTF_11 FAIRCHILD

获取价格

NPN Epitaxial Silicon Transistor
BC846BP DIOTEC

获取价格

SMD General Purpose NPN Transistors
BC846BP_18 DIOTEC

获取价格

SMD General Purpose NPN Transistors
BC846BPDW WEITRON

获取价格

NPN/PNP Dual General Purpose Transistors
BC846BPDW1T1 ONSEMI

获取价格

Dual General Purpose Transistors(NPN/PNP Duals)
BC846BPDW1T1/D ETC

获取价格

Dual General Purpose Transistors