Datasheet > BC846BPDW1T1D

BC846BPDW1T1D

更新时间： 2024-11-06 08:49:43

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
17页	160K
描述
Dual General Purpose Transistors

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BC846BPDW1T1D 数据手册

BC846BPDW1T1G,

BC847BPDW1T1G,

BC848CPDW1T1G

Dual General Purpose

Transistors

http://onsemi.com

NPN/PNP Duals (Complementary)

These transistors are designed for general purpose amplifier

applications. They are housed in the SOT−363/SC−88 which is

designed for low power surface mount applications.

(3)

(2)

(1)

Features

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

(4)

(5)

(6)

MAXIMUM RATINGS − NPN

Rating

Symbol

Value

Unit

MARKING

DIAGRAM

Collector-Emitter Voltage

BC846

BC847

BC848

CEO

CBO

EBO

Collector-Base Voltage

BC846

BC847

BC848

SOT−363

CASE 419B

STYLE 1

XX MG

Emitter−Base Voltage

6.0

Collector Current − Continuous

MAXIMUM RATINGS − PNP

Rating

100

mAdc

XX= Device Code

M = Date Code

= Pb−Free Package

Symbol

Value

Unit

(Note: Microdot may be in either location)

Collector-Emitter Voltage

Collector-Base Voltage

Emitter−Base Voltage

BC846

BC847

BC848

CEO

CBO

EBO

−65

−45

−30

ORDERING INFORMATION

†

BC846

BC847

BC848

−80

−50

−30

Device

Mark Package

Shipping

BC846BPDW1T1G BB

SOT−363

(Pb−Free)

3000 /

Tape & Reel

−5.0

BC847BPDW1T1G

SOT−363

(Pb−Free)

3000 /

Tape & Reel

Collector Current − Continuous

−100

mAdc

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommen-

ded Operating Conditions is not implied. Extended exposure to stresses

above the Recommended Operating Conditions may affect device reliability.

BC847BPDW1T2G BF

SOT−363

(Pb−Free)

3000 /

Tape & Reel

BC848CPDW1T1G

SOT−363

(Pb−Free)

3000 /

Tape & Reel

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Total Device Dissipation

Per Device

380

250

FR−5 Board (Note 1) T = 25°C

Derate above 25°C

3.0

mW/°C

°C/W

Thermal Resistance,

328

Junction−to−Ambient

Junction and Storage Temperature

T , T

−55 to +150

°C

stg

1. FR−5 = 1.0 x 0.75 x 0.062 in.

Publication Order Number:

October, 2010 − Rev. 6

BC846BPDW1T1/D

12 3 4 5 6 7...17

中文翻译

下载PDF

与BC846BPDW1T1D相关器件

型号	品牌	获取价格	描述	数据表
BC846BPDW1T1G	ONSEMI	获取价格	Dual General Purpose Transistors
BC846BPN	NXP	获取价格	65 V, 100 mA NPN/PNP general-purpose transistor
BC846BPN	NEXPERIA	获取价格	65 V, 100 mA NPN/PNP general-purpose transistorProduction
BC846BPN	PANJIT	获取价格	SOT-363
BC846BPN	MCC	获取价格	Tape: 3K/Reel , 120K/Ctn;
BC846BPN	YANGJIE	获取价格	SOT-363
BC846BPN	BL Galaxy Electrical	获取价格	65V,0.1A,General Purpose NPN+PNP Bipolar Transistor
BC846BPN,115	ETC	获取价格	TRANS NPN/PNP 65V 0.1A 6TSSOP
BC846BPN,125	NXP	获取价格	TRANSISTOR 100 mA, 65 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SC-
BC846BPN,135	NXP	获取价格	TRANSISTOR 100 mA, 65 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SC-

与BC846BPDW1T1D相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

14
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

12
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

36
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

33

产品中心

服务支持

精选活动

关于我们

帮助中心

BC846BPDW1T1D

BC846BPDW1T1D 数据手册

与BC846BPDW1T1D相关器件

与BC846BPDW1T1D相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

BC846BPDW1T1D

BC846BPDW1T1D 数据手册

与BC846BPDW1T1D相关器件

与BC846BPDW1T1D相关文章

您还可以找

您在本页遇到什么问题？