Datasheet > BC846BPDW1T1G

BC846BPDW1T1G

更新时间： 2024-11-25 08:49:43

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
17页	160K
描述
Dual General Purpose Transistors

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数据手册
替代型号

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BC846BPDW1T1G 数据手册

BC846BPDW1T1G,

BC847BPDW1T1G,

BC848CPDW1T1G

Dual General Purpose

Transistors

http://onsemi.com

NPN/PNP Duals (Complementary)

These transistors are designed for general purpose amplifier

applications. They are housed in the SOT−363/SC−88 which is

designed for low power surface mount applications.

(3)

(2)

(1)

Features

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

(4)

(5)

(6)

MAXIMUM RATINGS − NPN

Rating

Symbol

Value

Unit

MARKING

DIAGRAM

Collector-Emitter Voltage

BC846

BC847

BC848

CEO

CBO

EBO

Collector-Base Voltage

BC846

BC847

BC848

SOT−363

CASE 419B

STYLE 1

XX MG

Emitter−Base Voltage

6.0

Collector Current − Continuous

MAXIMUM RATINGS − PNP

Rating

100

mAdc

XX= Device Code

M = Date Code

= Pb−Free Package

Symbol

Value

Unit

(Note: Microdot may be in either location)

Collector-Emitter Voltage

Collector-Base Voltage

Emitter−Base Voltage

BC846

BC847

BC848

CEO

CBO

EBO

−65

−45

−30

ORDERING INFORMATION

†

BC846

BC847

BC848

−80

−50

−30

Device

Mark Package

Shipping

BC846BPDW1T1G BB

SOT−363

(Pb−Free)

3000 /

Tape & Reel

−5.0

BC847BPDW1T1G

SOT−363

(Pb−Free)

3000 /

Tape & Reel

Collector Current − Continuous

−100

mAdc

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommen-

ded Operating Conditions is not implied. Extended exposure to stresses

above the Recommended Operating Conditions may affect device reliability.

BC847BPDW1T2G BF

SOT−363

(Pb−Free)

3000 /

Tape & Reel

BC848CPDW1T1G

SOT−363

(Pb−Free)

3000 /

Tape & Reel

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Total Device Dissipation

Per Device

380

250

FR−5 Board (Note 1) T = 25°C

Derate above 25°C

3.0

mW/°C

°C/W

Thermal Resistance,

328

Junction−to−Ambient

Junction and Storage Temperature

T , T

−55 to +150

°C

stg

1. FR−5 = 1.0 x 0.75 x 0.062 in.

Publication Order Number:

October, 2010 − Rev. 6

BC846BPDW1T1/D

12 3 4 5 6 7...17

中文翻译

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BC846BPDW1T1G 替代型号

型号	品牌	替代类型	描述	数据表
BC846BPDW1T1	ONSEMI	类似代替	Dual General Purpose Transistors(NPN/PNP Duals)

与BC846BPDW1T1G相关器件

型号	品牌	获取价格	描述	数据表
BC846BPN	NXP	获取价格	65 V, 100 mA NPN/PNP general-purpose transistor
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BC846BPN	PANJIT	获取价格	SOT-363
BC846BPN	MCC	获取价格	Tape: 3K/Reel , 120K/Ctn;
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BC846BPN,115	ETC	获取价格	TRANS NPN/PNP 65V 0.1A 6TSSOP
BC846BPN,125	NXP	获取价格	TRANSISTOR 100 mA, 65 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SC-
BC846BPN,135	NXP	获取价格	TRANSISTOR 100 mA, 65 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SC-
BC846BPN,165	NXP	获取价格	TRANSISTOR 100 mA, 65 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SC-

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