Datasheet > BC846BPNH-Q

BC846BPNH-Q

更新时间： 2024-11-26 11:15:31

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
12页	263K
描述
65 V, 100 mA NPN/PNP general-purpose double transistorProduction

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BC846BPNH-Q 数据手册

BC846BPNH-Q

65 V, 100 mA NPN/PNP general-purpose double transistor

6 May 2021

Product data sheet

1. General description

NPN/PNP general-purpose double transistor in a very small SOT363 (SC-88) Surface-Mounted

Device (SMD) plastic package.

NPN/NPN complement: BC846BSH-Q

PNP/PNP complement: BC856BSH-Q

2. Features and benefits

•

Low collector capacitance

•

Low collector-emitter saturation voltage

Closely matched current gain

Reduces number of components and board space

No mutual interference between the transistors

High-temperature applications up to 175 °C

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

General-purpose switching and amplification

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor; for the PNP transistor with negative polarity

V_CEO

collector-emitter

voltage

open base

I_C

collector current

DC current gain

100

450

h_FE

V_CE= 5 V; I_C= 2 mA; T_amb= 25 °C

200

300

12 3 4 5 6 7...12

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