Datasheet > NE8500100_00

NE8500100_00

更新时间： 2024-09-14 03:32:55

品牌	Logo	应用领域
日电电子 - NEC		/
页数	文件大小	规格书
4页	63K
描述
C-BAND MEDIUM POWER GaAs MESFET

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中文翻译

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数据手册

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NE8500100_00 数据手册

NE8500100

NE8500199

C-BAND MEDIUM POWER GaAs MESFET

ABSOLUTE MAXIMUM RATINGS¹

FEATURES

(TC = 25 °C unless otherwise noted)

• HIGH OUTPUT POWER: 1 W

• HIGH LINEAR GAIN: 9.0 dB

SYMBOLS

VDS

PARAMETERS

Drain to Source Voltage

Gate to Drain Voltage

Gate to Source Voltage

Drain Current

UNITS

RATINGS

-18

• HIGH EFFICIENCY: 37% (PAE)

• INDUSTRY STANDARD PACKAGING

VGD

VGS

-12

IDS

IDSS

6.0

• THIS DEVICE IS ALSO AVAILABLE AS A

TWO-CELL CHIP: NE8500100

IGS

Gate Current

Total Power Dissipation

Channel Temperature

Storage Temperature

6.0

TCH

°C

175

DESCRIPTION

TSTG

-65 to +175

Note:

TheNE8500199isamediumpowerGaAsMESFETdesigned

for up to a 1W output stage or as a driver for higher power

devices. The device has no internal matching and can be

used at frequencies from UHF to 8.5 GHZ. The device is

availableinthe“99”packageorinchipform. Thechipisatwo-

cell die; bonding both cells delivers the rated performance.

1. Operation in excess of any one of these parameters may result in

permanent damage.

RECOMMENDED OPERATING LIMITS

SYMBOLS

PARAMETERS

Drain to Source Voltage

Channel Temperature

Gain Compression

Gate Resistance

UNITS MIN TYP MAX

The NE850 Series Transistors are manufactured to NEC's

stringent quality assurance standards to ensure highest reli-

ability and consistent superior performance.

VDS

130

3.0

TCH

°C

KΩ

GCOMP

ELECTRICAL CHARACTERISTICS (TC = 25°C)

PART NUMBER

NE8500199

NE8500100

PACKAGE OUTLINE

00 (Chip), 99

SYMBOLS

CHARACTERISTICS

UNITS

MIN

TYP

MAX

TEST CONDITIONS

POUT

Power Out at Fixed Input Power

dBm

28.5

29.5

PIN = 21.0 dBm

ηADD

IDS

Linear Gain

9.0

f = 7.2 GHz

VDS = 10 V; IDSQ = 200 mA

RG = 1KΩ

Collector Efficiency

Drain Source Current

Saturated Drain Current

Pinch-off Voltage

Transconductance

Thermal Resistance

200

IDSS

330

-3.0

825

-1.0

VDS = 2.5 V; VGS = 0 V

VDS = 2.5 V; IDS = 4 mA

VDS = 2.5 V; IDS = IDSS

Channel to Case

°C/W

300

RTH

California Eastern Laboratories

12 3 4

中文翻译

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与NE8500100_00相关器件

型号	品牌	获取价格	描述	数据表
NE8500100-A	NEC	获取价格	暂无描述
NE8500100-RG	NEC	获取价格	1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
NE8500100-RG-A	NEC	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, M
NE8500100-WB	NEC	获取价格	1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
NE8500100-WB-A	NEC	获取价格	暂无描述
NE8500199	NEC	获取价格	1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
NE8500199-A	NEC	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, M
NE85002	NEC	获取价格	2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
NE85002_02	NEC	获取价格	2 WATT C-BAND POWER GaAs MESFET
NE8500200	NEC	获取价格	2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET