是否Rohs认证: | 符合 | 生命周期: | Transferred |
包装说明: | 95, 3 PIN | Reach Compliance Code: | compliant |
风险等级: | 5.62 | Is Samacsys: | N |
其他特性: | HIGH RELIABILITY | 外壳连接: | SOURCE |
配置: | SINGLE | 最小漏源击穿电压: | 15 V |
最大漏极电流 (ID): | 2.5 A | FET 技术: | METAL SEMICONDUCTOR |
最高频带: | C BAND | JESD-30 代码: | R-CDFM-F2 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | DEPLETION MODE |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | FLAT |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 10 |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | GALLIUM ARSENIDE |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NE850R599 | NEC |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Se | |
NE850R599A | NEC |
获取价格 |
C-BAND MEDIUM POWER GaAs MESFET | |
NE850R599A-A | NEC |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, M | |
NE851M03 | CEL |
获取价格 |
NECs NPN SILICON TRANSISTOR | |
NE851M03-T1-A | CEL |
获取价格 |
NECs NPN SILICON TRANSISTOR | |
NE851M03-T3 | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, S Band, Silicon, NPN, MINIATURE, | |
NE851M13 | NEC |
获取价格 |
NE851M13 | |
NE851M13 | CEL |
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NPN SILICON TRANSISTOR | |
NE851M13-A | RENESAS |
获取价格 |
L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, LEADLESS MINIMOLD PACKAGE-3 | |
NE851M13-A-FB | RENESAS |
获取价格 |
L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, LEADLESS MINIMOLD PACKAGE-3 |