Datasheet > 晶体管 > 射频场效应晶体管> NE8500200-WB-A

NE8500200-WB-A

更新时间： 2024-09-14 13:11:59

品牌	Logo	应用领域
日电电子 - NEC		晶体射频场效应晶体管放大器
页数	文件大小	规格书
6页	60K
描述
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, DIE

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中文翻译

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NE8500200-WB-A 数据手册

2 WATT C-BAND NE85002

POWER GaAs MESFET SERIES

FEATURES

SELECTION CHART

TYPICAL PERFORMANCE

•

CLASS A OPERATION

PART

NUMBER

POUT

FREQUENCY

RANGE

HIGH EFFICIENCY: ηADD ≥ 39% TYP

BROADBAND CAPABILITY

(dBm)

(GHz)

(dB)

NE8500200

33.8 MIN

33.5 MIN

2.0 to 10

3.5 to 4.5

5.5 to 6.5

7.5 to 8.5

8.0 MIN

10.5 MIN

9.5 MIN

8.0 MIN

PACKAGE OPTIONS:

Chip

Hermetic Package

NE8500295-4

NE8500295-6

NE8500295-8

•

PARTIALLY MATCHED INPUT FOR PACKAGED

DEVICES

PROVEN RELIABILITY

DESCRIPTION

The NE8500295 power GaAs FET covers the 3.5 to 8.5 GHz

frequency range with three different Class A, 2 W partially

matcheddevices.Eachpackageddevicehasaninputlumped

element matching network.

The NE8500200 is the six-cell recessed gate chip used in the

"95" package. The device incorporates a Ti-Al gate structure,

SiO2 glassivation and plated heat sink technology.

ELECTRICAL CHARACTERISTICS (TC = 25°C)

PART NUMBER

PACKAGE OUTLINE

NE8500200¹

00 (CHIP)

NE8500295-4

NE8500295-6

NE8500295-8

SYMBOLS

PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX

IDSS

Saturated Drain Current

VDS = 2.5 V, VGS = 0 V

mA 950

1900 950

-1.0 -3.0

1900 950

-1.0 -3.0

1900 950

-1.0 -3.0

1900

-1.0

Pinch-off Voltage

VDS = 2.5 V, ID = 8 mA

-3.0

Transconductance

VDS = 2.5 V, ID = IDSS

600

BVGDO

IGS

Drain-Gate Breakdown Voltage

IGD = 8 mA

Gate to Source Current, VDS = 10 V,

IDSQ = 450 mA, POUT = PTEST

mA -2.4

2.4 -2.4

2.4

RTH

Thermal Resistance (Channel-to-Case) °C/W

PTEST

Power Output at Test Point

VDS = 10 V, IDS = 450 mA set

PIN = 27.0 dBm

PIN = 24.5 dBm

PIN = 25.5 dBm

dBm 33.8

dBm

33.5

8.0

33.8

10.5

33.8

9.5

Linear Gain

VDS = 10 V, IDS = 450 mA

8.0

9.0

ηADD

Power Added Efficiency

at PTEST

OUT - PIN

Notes:

ADD =

x 100%

1. Six-cell chip: all cells are used. RF performance of the chip is

determined by packaging 10 chips per wafer. Wafer rejection

criteria for standard devices are 2 rejects per 10 samples.

2. This is a production test. Test frequencies are: -4 @ 4.2 GHz,

-6 @ 6.5 GHz, -8 and NE8500200 @ 8.5 GHz.

DS - ID

CaliforniaEasternLaboratories

12 3 4 5 6

中文翻译

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与NE8500200-WB-A相关器件

型号	品牌	获取价格	描述	数据表
NE8500295-4	NEC	获取价格	2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
NE8500295-4-A	NEC	获取价格	RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Se
NE8500295-6	NEC	获取价格	2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
NE8500295-6-A	NEC	获取价格	暂无描述
NE8500295-8	NEC	获取价格	2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
NE8500295-8-A	NEC	获取价格	RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Se
NE850R599	NEC	获取价格	RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Se
NE850R599A	NEC	获取价格	C-BAND MEDIUM POWER GaAs MESFET
NE850R599A-A	NEC	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, M
NE851M03	CEL	获取价格	NECs NPN SILICON TRANSISTOR

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