Datasheet > NE851M13-T3-A

NE851M13-T3-A

更新时间： 2024-09-15 03:46:43

品牌	Logo	应用领域
CEL		晶体晶体管光电二极管放大器
页数	文件大小	规格书
10页	240K
描述
NPN SILICON TRANSISTOR

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NE851M13-T3-A 数据手册

NEC's NPN SILICON TRANSISTOR NE851M13

OUTLINE DIMENSIONS ^{(Units in mm)}

FEATURES

PACKAGE OUTLINE M13

•

NEW MINIATURE M13 PACKAGE:

– Small transistor outline

– 1.0 X 0.5 X 0.5 mm

– Low profile / 0.50 mm package height

– Flat lead style for better RF performance

0.7±0.05

(Bottom View)

+0.1

0.5

ñ0.05

0.3

•

IDEAL FOR ≤ 3 GHz OSCILLATORS

LOW PHASE NOISE

LOW PUSHING FACTOR

DESCRIPTION

0.2

NEC's NE851M13 transistor is designed for oscillator applica-

tions up to 3 GHz. The NE851M13 features low voltage

operation, low phase noise, and high immunty to pushing

effects. NEC's new low profile/flat lead style "M13" package is

ideal for today's portable wireless applications.

0.1

PIN CONNECTIONS

1. Emitter

2. Base

3. Collector

ELECTRICAL CHARACTERISTICS (TA = 25°C)

PART NUMBER

EIAJ¹REGISTERED NUMBER

PACKAGE OUTLINE

NE851M13

2SC5801

M13

SYMBOLS

PARAMETERS AND CONDITIONS

UNITS

MIN

TYP

MAX

Gain Bandwidth at VCE = 1 V, IC = 5 mA, f = 2 GHz

Gain Bandwidth at VCE = 1 V, IC = 15 mA, f = 2 GHz

GHz

3.0

5.0

4.5

6.5

–

|S21E|²

Insertion Power Gain at VCE = 1 V, IC = 5 mA, f = 2 GHz

Insertion Power Gain at VCE = 1 V, IC = 15 mA, f = 2 GHz

3.0

4.5

4.0

5.5

–

CRE

ICBO

IEBO

hFE

Noise Figure at VCE = 1 V, IC = 10 mA, f = 2 GHz

Reverse Transfer Capacitance³at VCB = 0.5 V, IE = 0 mA, f = 1 MHz

Collector Cutoff Current at VCB = 5 V, IE = 0

–

1.9

0.6

–

2.5

0.8

–

600

145

Emitter Cutoff Current at VEB = 1 V, IC = 0

–

DC Current Gain²at VCE = 1 V, IC = 5 mA

100

120

Notes:

1. Electronic Industrial Association of Japan.

2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.

3. Collector to base capacitance when the emitter is grounded

California Eastern Laboratories

12 3 4 5 6 7...10

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