NE850R599A

更新时间： 2024-09-14 22:29:07

品牌	Logo	应用领域
日电电子 - NEC		/
页数	文件大小	规格书
2页	22K
描述
C-BAND MEDIUM POWER GaAs MESFET

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NE850R599A 数据手册

NE850R599A

C-BAND MEDIUM POWER GaAs MESFET

OUTLINE DIMENSIONS (Units in mm)

FEATURES

PACKAGE OUTLINE 99

• HIGH OUTPUT POWER: 0.5 W

• HIGH LINEAR GAIN: 9.5 dB

5.2±0.3

1.0±0.1

• HIGH EFFICIENCY (PAE): 38%

• SUPERIOR INTERMODULATION DISTORTION

• INDUSTRY STANDARD PACKAGING

4.0 MIN BOTH LEADS

Gate

φ2.2±0.2

4.3±0.2

4.0±0.1

DESCRIPTION

Source

The NE850R599A is a medium power GaAs MESFET de-

signed for up to a 1/2W output stage or as a driver for higher

power devices. The device has no internal matching and can

be used at frequencies from UHF to 8.5 GHZ. Equivalent

performance in a chip package can be obtained by using only

1 cell of the NE8500100 chip. The chips used in this series

offer superior reliability and consistent performance for which

NEC microwave semiconductors are known.

Drain

0.6±0.1

5.2±0.3

11.0±0.15

15.0±0.3

+.06

-.02

0.1

0.2 MAX

5.0 MAX

1.7±0.15

6.0±0.2

1.2

RECOMMENDED OPERATING LIMITS

SYMBOLS

PARAMETERS

Drain to Source Voltage

Channel Temperature

Gain Compression

Gate Resistance

UNITS MIN TYP MAX

VDS

130

3.0

TCH

°C

KΩ

GCOMP

ELECTRICAL CHARACTERISTICS (TC = 25°C)

PART NUMBER

NE850R599A

PACKAGE OUTLINE

SYMBOLS

CHARACTERISTICS

UNITS

MIN

TYP

MAX

TEST CONDITIONS

POUT

Power Out at Fixed Input Power

dBm

25.5

26.5

PIN = 18.5 dBm¹

ηADD

Power Added Efficiency

VDS = 10 V; IDSQ = 100 mA

IDS

IGS

Drain Source Current

Gate to Source Current

Linear Gain

140

f = 7.2 GHz; RG = 1 KΩ

-1.6

1.6

9.5

PIN = 7 dBm²

IDSS

Saturated Drain Current

Pinch-off Voltage

220

-3.0

430

-1.0

VDS = 2.5 V; VGS = 0 V

VDS = 2.5 V; IDS = 2 mA

VDS = 2.5 V; IDS = IDSS

Transconductance

°C/W

150

RTH

Thermal Resistance (channel to case)

California Eastern Laboratories

中文翻译

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