Datasheet > NE851M03

NE851M03

更新时间： 2024-09-14 22:29:07

品牌	Logo	应用领域
CEL		晶体晶体管
页数	文件大小	规格书
10页	472K
描述
NECs NPN SILICON TRANSISTOR

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NE851M03 数据手册

NE851M03

NEC's NPN SILICON TRANSISTOR

OUTLINE DIMENSIONS (Units in mm)

FEATURES

PACKAGE OUTLINE M03

•

NEW MINIATURE M03 PACKAGE:

– Small transistor outline

1.2±0.05

0.8±0.1

– Low proﬁle / 0.59 mm package height

– Flat lead style for better RF performance

•

IDEAL FOR ≤ 3 GHz OSCILLATORS

LOW 1/f NOISE

1.4 ±0.1

(0.9)

0.45

LOW PUSHING FACTOR

+0.1

-0

0.3

+0.1

-0

0.2

DESCRIPTION

NEC's NE851M03 transistor is designed for oscillator appli-

cations up to 3 GHz. The NE851M03 features low voltage

operation, low phase noise, and high immunty to pushing ef-

fects. NEC's low proﬁle/ﬂat lead style "M03" package is ideal

for today's portable wireless applications.

0.59±0.05

+0.1

-0.05

0.15

PIN CONNECTIONS

1. Emitter

2. Base

3. Collector

ELECTRICAL CHARACTERISTICS (TA = 25°C)

PART NUMBER

EIAJ¹REGISTERED NUMBER

PACKAGE OUTLINE

NE851M03

2SC5800

M03

SYMBOLS

PARAMETERS AND CONDITIONS

UNITS

MIN

TYP

MAX

Gain Bandwidth at VCE = 1 V, IC = 5 mA, f = 2 GHz

Gain Bandwidth at VCE = 1 V, IC = 15 mA, f = 2 GHz

GHz

3.0

5.0

4.5

6.5

–

|S21E|²

Insertion Power Gain at VCE = 1 V, IC = 5 mA, f = 2 GHz

Insertion Power Gain at VCE = 1 V, IC = 15 mA, f = 2 GHz

3.0

4.5

4.0

5.5

–

CRE

ICBO

IEBO

hFE

Noise Figure at VCE = 1 V, IC = 10 mA, f = 2 GHz, Zs = Zopt

–

1.9

0.6

–

2.5

0.8

Reverse Transfer Capacitance³at VCB = 0.5 V, IE = 0 mA, f = 1 MHz

Collector Cutoff Current at VCB = 5 V, IE = 0

–

600

145

Emitter Cutoff Current at VEB = 1 V, IC = 0

DC Current Gain²at VCE = 1 V, IC = 5 mA

–

100

120

Notes:

1. Electronic Industrial Association of Japan.

2. Pulsed measurement, pulse width ≤ 350 μs, duty cycle ≤ 2 %.

3. Collector to base capacitance when the emitter is grounded

California Eastern Laboratories

12 3 4 5 6 7...10

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