NE85600-A

更新时间： 2024-09-15 13:11:59

品牌	Logo	应用领域
日电电子 - NEC		晶体小信号双极晶体管射频小信号双极晶体管放大器
页数	文件大小	规格书
25页	257K
描述
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, LEAD FREE, DIE-2

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技术参数
数据手册

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NE85600-A 技术参数

生命周期：	Transferred	包装说明：	LEAD FREE, DIE-2
Reach Compliance Code：	unknown	风险等级：	5.78
其他特性：	LOW NOISE	最大集电极电流 (IC)：	0.1 A
基于收集器的最大容量：	1 pF	集电极-发射极最大电压：	12 V
配置：	SINGLE	最高频带：	ULTRA HIGH FREQUENCY BAND
JESD-30 代码：	R-XUUC-N2	元件数量：	1
端子数量：	2	封装主体材料：	UNSPECIFIED
封装形状：	RECTANGULAR	封装形式：	UNCASED CHIP
极性/信道类型：	NPN	认证状态：	Not Qualified
表面贴装：	YES	端子形式：	NO LEAD
端子位置：	UPPER	晶体管应用：	AMPLIFIER
晶体管元件材料：	SILICON	标称过渡频率 (fT)：	7000 MHz
Base Number Matches：	1

NE85600-A 数据手册

NEC's NPN SILICON HIGH

FREQUENCY TRANSISTOR

NE856

SERIES

FEATURES

• HIGH GAIN BANDWIDTH PRODUCT:

fT = 7 GHz

• LOW NOISE FIGURE:

1.1 dB at 1 GHz

• HIGH COLLECTOR CURRENT: 100 mA

• HIGH RELIABILITY METALLIZATION

• LOW COST

35 (MICRO-X)

00 (CHIP)

DESCRIPTION

NEC's NE856 series of NPN epitaxial silicon transistors is

designedforlowcostamplifierandoscillatorapplications. Low

noise figures, high gain, and high current capability equate to

wide dynamic range and excellent linearity. The NE856 series

offers excellent performance and reliability at low cost. This is

achieved by NEC's titanium/platinum/gold metallization sys-

tem and their direct nitride passivated base surface process.

The NE856 series is available in chip form and a Micro-x

package for high frequency applications. It is also available in

several low cost plastic package styles.

32 (TO-92)

34 (SOT 89 STYLE)

19 (3 PIN ULTRA SUPER

MINI MOLD)

18 (SOT 343 STYLE)

NE85600

NOISE FIGURE AND GAIN

vs. FREQUENCY

CC = 10 V, IC 7 mA

4.0

3.5

MSG

MAG

30 (SOT 323 STYLE)

33 (SOT 23 STYLE)

3.0

2.5

2.0

NFMIN

1.5

1.0

0.4 0.5

1.0

39 (SOT 143 STYLE)

39R (SOT 143R STYLE)

Frequency, f (GHz)

California Eastern Laboratories

12 3 4 5 6 7...25

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