Datasheet > NE85632-A

NE85632-A

更新时间： 2024-09-26 20:35:07

品牌	Logo	应用领域
日电电子 - NEC		/
页数	文件大小	规格书
26页	626K
描述
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-92, LEAD FREE, PLASTIC PACKAGE-3

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技术参数
数据手册

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NE85632-A 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.6	Is Samacsys：	N
最大集电极电流 (IC)：	0.1 A	配置：	Single
最小直流电流增益 (hFE)：	50	最高工作温度：	150 °C
极性/信道类型：	NPN	最大功率耗散 (Abs)：	0.6 W
子类别：	Other Transistors	表面贴装：	NO
Base Number Matches：	1

NE85632-A 数据手册

NPN SILICON RF TRANSISTOR

NE856 SERIES

NEC's NPN SILICON HIGH

FREQUENCY TRANSISTOR

FEATURES

• HIGH GAIN BANDWIDTH PRODUCT:

fT = 7 GHz

• LOW NOISE FIGURE:

1.1 dB at 1 GHz

• HIGH COLLECTOR CURRENT: 100 mA

• HIGH RELIABILITY METALLIZATION

• LOW COST

35 (MICRO-X)

00 (CHIP)

DESCRIPTION

NEC's NE856 series of NPN epitaxial silicon transistors is

designedforlowcostamplifierandoscillatorapplications. Low

noise figures, high gain, and high current capability equate to

wide dynamic range and excellent linearity. The NE856 series

offers excellent performance and reliability at low cost. This is

achieved by NEC's titanium/platinum/gold metallization sys-

tem and their direct nitride passivated base surface process.

The NE856 series is available in chip form and a Micro-x

package for high frequency applications. It is also available in

several low cost plastic package styles.

32 (TO-92)

34 (SOT 89 STYLE)

19 (3 PIN ULTRA SUPER

MINI MOLD)

18 (SOT 343 STYLE)

NE85600

NOISE FIGURE AND GAIN

vs. FREQUENCY

VCC = 10 V, IC 7 mA

4.0

3.5

MSG

MAG

3.0

2.5

2.0

30 (SOT 323 STYLE)

33 (SOT 23 STYLE)

NFMIN

1.5

1.0

0.4 0.5

1.0

Frequency, f (GHz)

39 (SOT 143 STYLE)

39R (SOT 143R STYLE)

The information in this document is subject to change without notice. Before using this document, please confirm

that this is the latest version.

Date Published: June 28, 2005

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与NE85632-A相关器件

型号	品牌	获取价格	描述	数据表
NE85633	NEC	获取价格	NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
NE85633Q-A	CEL	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic
NE85633Q-T1B-A	CEL	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic
NE85633R-A	CEL	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic
NE85633R-T1B-A	CEL	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic
NE85633S-A	CEL	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic
NE85633S-T1B-A	CEL	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic
NE85633-T1	CEL	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic
NE85633-T1B	CEL	获取价格	NPN SILICON HIGH FREQUENCY TRANSISTOR
NE85633-T1B	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic