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NE85630-T1 PDF预览

NE85630-T1

更新时间: 2024-11-01 03:46:43
品牌 Logo 应用领域
CEL 晶体小信号双极晶体管射频小信号双极晶体管光电二极管放大器
页数 文件大小 规格书
26页 828K
描述
NPN SILICON HIGH FREQUENCY TRANSISTOR

NE85630-T1 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.39
Is Samacsys:N其他特性:LOW NOISE
最大集电极电流 (IC):0.1 A基于收集器的最大容量:1.5 pF
集电极-发射极最大电压:12 V配置:SINGLE
最小直流电流增益 (hFE):40最高频带:L BAND
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):4500 MHzBase Number Matches:1

NE85630-T1 数据手册

 浏览型号NE85630-T1的Datasheet PDF文件第2页浏览型号NE85630-T1的Datasheet PDF文件第3页浏览型号NE85630-T1的Datasheet PDF文件第4页浏览型号NE85630-T1的Datasheet PDF文件第5页浏览型号NE85630-T1的Datasheet PDF文件第6页浏览型号NE85630-T1的Datasheet PDF文件第7页 
NPN SILICON RF TRANSISTOR  
NE856 SERIES  
NEC's NPN SILICON HIGH  
FREQUENCY TRANSISTOR  
FEATURES  
HIGH GAIN BANDWIDTH PRODUCT:  
fT = 7 GHz  
E
LOW NOISE FIGURE:  
1.1 dB at 1 GHz  
B
HIGH COLLECTOR CURRENT: 100 mA  
HIGH RELIABILITY METALLIZATION  
LOW COST  
35 (MICRO-X)  
00 (CHIP)  
DESCRIPTION  
NEC's NE856 series of NPN epitaxial silicon transistors is  
designedforlowcostamplifierandoscillatorapplications. Low  
noise figures, high gain, and high current capability equate to  
wide dynamic range and excellent linearity. The NE856 series  
offers excellent performance and reliability at low cost. This is  
achieved by NEC's titanium/platinum/gold metallization sys-  
tem and their direct nitride passivated base surface process.  
The NE856 series is available in chip form and a Micro-x  
package for high frequency applications. It is also available in  
several low cost plastic package styles.  
32 (TO-92)  
34 (SOT 89 STYLE)  
19 (3 PIN ULTRA SUPER  
MINI MOLD)  
18 (SOT 343 STYLE)  
NE85600  
NOISE FIGURE AND GAIN  
vs. FREQUENCY  
V
CC = 10 V, IC 7 mA  
20  
15  
10  
5
4.0  
3.5  
MSG  
GA  
MAG  
3.0  
2.5  
2.0  
30 (SOT 323 STYLE)  
33 (SOT 23 STYLE)  
NFMIN  
1.5  
1.0  
0.4 0.5  
1.0  
2
3
4
5
Frequency, f (GHz)  
39 (SOT 143 STYLE)  
39R (SOT 143R STYLE)  
The information in this document is subject to change without notice. Before using this document, please confirm  
that this is the latest version.  
Date Published: June 28, 2005  

NE85630-T1 替代型号

型号 品牌 替代类型 描述 数据表
NE85630-T1-A CEL

类似代替

NPN SILICON HIGH FREQUENCY TRANSISTOR

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