NE85635-A

更新时间： 2024-01-16 10:10:42

品牌	Logo	应用领域
日电电子 - NEC		晶体晶体管放大器
页数	文件大小	规格书
25页	257K
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NE85635-A 数据手册

NEC's NPN SILICON HIGH

FREQUENCY TRANSISTOR

NE856

SERIES

FEATURES

• HIGH GAIN BANDWIDTH PRODUCT:

fT = 7 GHz

• LOW NOISE FIGURE:

1.1 dB at 1 GHz

• HIGH COLLECTOR CURRENT: 100 mA

• HIGH RELIABILITY METALLIZATION

• LOW COST

35 (MICRO-X)

00 (CHIP)

DESCRIPTION

NEC's NE856 series of NPN epitaxial silicon transistors is

designedforlowcostamplifierandoscillatorapplications. Low

noise figures, high gain, and high current capability equate to

wide dynamic range and excellent linearity. The NE856 series

offers excellent performance and reliability at low cost. This is

achieved by NEC's titanium/platinum/gold metallization sys-

tem and their direct nitride passivated base surface process.

The NE856 series is available in chip form and a Micro-x

package for high frequency applications. It is also available in

several low cost plastic package styles.

32 (TO-92)

34 (SOT 89 STYLE)

19 (3 PIN ULTRA SUPER

MINI MOLD)

18 (SOT 343 STYLE)

NE85600

NOISE FIGURE AND GAIN

vs. FREQUENCY

CC = 10 V, IC 7 mA

4.0

3.5

MSG

MAG

30 (SOT 323 STYLE)

33 (SOT 23 STYLE)

3.0

2.5

2.0

NFMIN

1.5

1.0

0.4 0.5

1.0

39 (SOT 143 STYLE)

39R (SOT 143R STYLE)

Frequency, f (GHz)

California Eastern Laboratories

12 3 4 5 6 7...25

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NE85639R	NEC	获取价格	NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
NE85639R-T1	CEL	获取价格	NPN SILICON HIGH FREQUENCY TRANSISTOR
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NE85639R-T1-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic
NE85639R-T2	CEL	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic
NE85639-T1	CEL	获取价格	NPN SILICON HIGH FREQUENCY TRANSISTOR
NE85639-T1	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic
NE85639-T1-A	CEL	获取价格	NPN SILICON HIGH FREQUENCY TRANSISTOR