NPN EPITAXIAL SILICON
TRANSISTOR HIGH FREQUENCY
LOW DISTORTION AMPLIFIER
NE856M02
FEATURES
OUTLINE DIMENSIONS(Units in mm)
PACKAGE OUTLINE M02
•
•
•
•
HIGH COLLECTOR CURRENT:
100 mA MAX
NEW HIGH GAIN POWER MINI-MOLD PACKAGE
(SOT-89 TYPE)
HIGH OUTPUT POWER AT 1 dB COMPRESSION:
22 dBm TYP at 1 GHz
HIGH IP3:
BOTTOM VIEW
4.5±0.1
1.6±0.2
1.5±0.1
32 dBm TYP at 1 GHz
C
E
B
E
DESCRIPTION
NEC's NE856M02 is an NPN silicon epitaxial bipolar transistor
designed for medium power applications requiring high dy-
namic range and low intermodulation distortion. This device
offers excellent performance and reliability at low cost through
NEC's titanium, platinum, gold metallization system and direct
nitride passivation of the surface of the chip. The NE856M02
isanexcellentchoiceforlownoiseamplifiersintheVHFtoUHF
band and is suitable for CATV and other telecommunication
applications.
0.42
±0.06
0.42
±0.06
0.25±0.02
0.45
±0.06
1.5
3.0
PIN CONNECTIONS
E: Emitter
C: Collector
B: Base
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
EIAJ1 REGISTERED NUMBER
PACKAGE OUTLINE
NE856M02
2SC5336
M02
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
1.0
ICBO
IEBO
Collector Cutoff Current at VCB = 10 V, IE = 0
µA
µA
Emitter Cutoff Current at VEB = 1 V, IC = 0
1.0
2
hFE
DC Current Gain at VCE = 10 V, IC = 20 mA
50
120
6.5
250
fT
Gain Bandwidth Product at VCE = 10 V, IC = 20 mA
Feed-back Capacitance at VCB = 10 V, IE = 0, f = 1.0 MHz
Insertion Power Gain at VCE = 10 V, IC = 20 mA, f = 1 GHz
Noise Figure 1 at VCE = 10 V, IC = 7 mA, f = 1 GHz
Noise Figure 2 at VCE = 10 V, IC = 40 mA, f = 1 GHz
GHz
pF
3
CRE
0.5
0.8
3.0
|S21E|2
dB
12.0
1.1
NF1
dB
NF2
dB
1.8
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.
3.The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge.
California Eastern Laboratories