Datasheet > NE894M03

NE894M03

更新时间： 2024-01-12 10:49:28

品牌	Logo	应用领域
CEL		晶体晶体管光电二极管
页数	文件大小	规格书
8页	138K
描述
NECs NPN SILICON TRANSISTOR

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技术参数
数据手册

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NE894M03 技术参数

生命周期：	Obsolete	包装说明：	M03, 3 PIN
Reach Compliance Code：	unknown	风险等级：	5.84
Is Samacsys：	N	其他特性：	LOW NOISE
最大集电极电流 (IC)：	0.035 A	基于收集器的最大容量：	0.3 pF
集电极-发射极最大电压：	3 V	配置：	SINGLE
最高频带：	S BAND	JESD-30 代码：	R-PDSO-F3
元件数量：	1	端子数量：	3
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	极性/信道类型：	NPN
认证状态：	Not Qualified	表面贴装：	YES
端子形式：	FLAT	端子位置：	DUAL
晶体管元件材料：	SILICON	标称过渡频率 (fT)：	20000 MHz
Base Number Matches：	1

NE894M03 数据手册

NE894M03

NEC's NPN SILICON TRANSISTOR

FEATURES

OUTLINE DIMENSIONS ^{(Units in mm)}

•

MINIATURE M03 PACKAGE:

– Small transistor outline

PACKAGE OUTLINE M03

– Low proﬁle / 0.59 mm package height

– Flat lead style for better RF performance

1.2±0.05

0.8±0.1

•

IDEAL FOR > 3 GHz OSCILLATORS

LOW NOISE, HIGH GAIN

LOW Cre

1.4 ±0.1

(0.9)

0.45

0.3±0.1

UHSO 25 GHz PROCESS

0.2±0.1

DESCRIPTION

NEC's NE894M03 transistor is designed for oscillator appli-

cations above 3 GHz. The NE894M03 features low voltage,

low current operation, low noise, and high gain. NEC's low

proﬁle/ﬂatleadstyle"M03"packageisidealfortoday'sportable

wireless applications.

0.59±0.05

+0.1

-0.05

0.15

PIN CONNECTIONS

1. Emitter

2. Base

3. Collector

ELECTRICAL CHARACTERISTICS (TA = 25°C)

PART NUMBER

EIAJ¹REGISTERED NUMBER

PACKAGE OUTLINE

NE894M03

2SC5786

M03

SYMBOLS

|S21E|²

PARAMETERS AND CONDITIONS

Gain Bandwidth at VCE = 1 V, IC = 20 mA, f = 2 GHz

Insertion Power Gain at VCE = 1 V, IC = 20 mA, f = 2 GHz

Noise Figure at VCE = 1 V, IC = 5 mA, f = 2 GHz, ZS = ZOPT

UNITS

GHz

MIN

–

TYP

1.4

0.22

–

MAX

–

|NF

2.5

0.30

100

Cre

Reverse Transfer Capacitance³at VCB = 0.5 V, IE = 0 mA, f = 1 MHz

–

ICBO

Collector Cutoff Current at VCB = 5 V, IE = 0

–

IEBO

Emitter Cutoff Current at VEB = 1 V, IC = 0

DC Current Gain²at VCE = 1 V, IC = 5 mA

–

hFE

–

Notes:

1. Electronic Industrial Association of Japan.

2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.

3. Collector to base capacitance when the emitter is grounded

California Eastern Laboratories

12 3 4 5 6 7 8

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