Datasheet > NE9001

NE9001

更新时间： 2024-02-20 10:49:50

品牌	Logo	应用领域
日电电子 - NEC		/
页数	文件大小	规格书
5页	72K
描述
Ku-BAND MEDIUM POWER GaAs MESFET

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中文翻译

获取价格

数据手册

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NE9001 数据手册

NE9000 SERIES

NE9001 SERIES

NE9002 SERIES

Ku-BAND MEDIUM

POWER GaAs MESFET

FEATURES

TYPICAL LINEAR GAIN vs. FREQUENCY

•

CLASS A OPERATION

HIGH OUTPUT POWER

POUT = 26.5 dBm

G1dB = 7 dB

•

HIGH POWER ADDED EFFICIENCY

NE9000

DESCRIPTION

The NE9000, NE9001, and NE9002 are 0.5 micron recessed

gate medium power GaAs FETs for commercial and space

amplifier and oscillator applications to 20 GHz. Chip configu-

rations available are: the NE900000, a one cell die of 400 µm

gate width; the NE900100, a one cell die of 750 µm gate

width; and the NE900200, a two cell die of 1500 µm total gate

width. The series is available in chip form or a variety of

hermetic ceramic packages. The NE900000, NE900100,

and NE900200 are standard die without wrap-around source-

metallization, while the NE900000G, NE900100G, and

NE900200G have wrap-around source metallization. The

series is space qualified.

NE9001/9002

2.0

10.0

Frequency (GHz)

ELECTRICAL CHARACTERISTICS (TA = 25°C)

PART NUMBER

NE900000

NE900000G

NE900075

NE900100

NE900100G

NE900175

NE900200

NE900200G

NE900275

NE900089A

89A

PACKAGE OUTLINE

00 (CHIP), 75

SYMBOLS

PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX

IDSS

Saturated Drain Current at

VDS = 2.5 V, VGS = 0

120 150

120 150 150 225 300 300 450 600

Pinch-off Voltage at VDS = 2.5 V,

IDS = 2.5 mA

-1.5 -3.5

-5

-1.5 -3.5

-5

IDS = 5 mA

-2

-3.5

-5

IDS = 10 mA

-2

-3.5

100

-5

Transconductance at VDS = 2.5 V,

IDS = 50 mA

IDS = 90 mA

IDS = 180 mA

RTH (C-C) ThermalResistance(Channel-to-Case)

°C/W

180

0.8

180

0.8

100

1.5

TotalPowerDissipation

PTEST

Power Output at Test Point

PIN = 11 dBm, VDS = 8V, ID = 50mA,

f = 8 GHz

dBm 19.5 20.5

PIN = 12 dBm,VDS = 8V, ID = 50mA

f = 14.5 GHz

dBm

19.5 20.5

PIN = 15 dBm, VDS = 8V, ID = 90mA

f = 14.5 GHz

PIN = 19 dBm, VDS = 8 V, ID = 180 mA,

f = 14.5

25.5 26.5

P1dB

Output Power at 1 dB Compression

Point,

VDS = 8 V, ID = 50 mA, f = 8 GHz

VDS = 8 V, ID = 50 mA, f = 14.5 GHz

VDS = 8 V, ID = 90 mA, f = 14.5 GHz

VDS = 8 V, ID = 180 mA, f = 14.5 GHz

dBm

20.5

G1dB

Gain at 1 dB Compression Point

VDS = 8 V, ID = 50 mA, f = 8 GHz

VDS = 8 V, ID = 50 mA, f = 14.5 GHz

VDS = 8 V, ID = 90 mA, f = 14.5 GHz

VDS = 8 V, ID = 180 mA, f = 14.5 GHz

ηADD

Power Added Efficiency

VDS = 8 V, at P1dB Conditions.

California Eastern Laboratories

12 3 4 5

中文翻译

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与NE9001相关器件

型号	品牌	获取价格	描述	数据表
NE900100	CEL	获取价格	RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal S
NE900100	NEC	获取价格	Ku-BAND MEDIUM POWER GaAs MESFET
NE900100G	NEC	获取价格	Ku-BAND MEDIUM POWER GaAs MESFET
NE900100G	CEL	获取价格	RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal S
NE900175	NEC	获取价格	Ku-BAND MEDIUM POWER GaAs MESFET
NE900175	RENESAS	获取价格	KU BAND, GaAs, N-CHANNEL, RF POWER, FET
NE900175	CEL	获取价格	RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal S
NE900176	RENESAS	获取价格	RF SMALL SIGNAL, FET
NE900189A	RENESAS	获取价格	RF SMALL SIGNAL, FET
NE9002	NEC	获取价格	Ku-BAND MEDIUM POWER GaAs MESFET

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