NE9000 SERIES
NE9001 SERIES
NE9002 SERIES
Ku-BAND MEDIUM
POWER GaAs MESFET
FEATURES
TYPICAL LINEAR GAIN vs. FREQUENCY
•
•
CLASS A OPERATION
24
21
18
HIGH OUTPUT POWER
POUT = 26.5 dBm
G1dB = 7 dB
•
HIGH POWER ADDED EFFICIENCY
NE9000
DESCRIPTION
15
The NE9000, NE9001, and NE9002 are 0.5 micron recessed
gate medium power GaAs FETs for commercial and space
amplifier and oscillator applications to 20 GHz. Chip configu-
rations available are: the NE900000, a one cell die of 400 µm
gate width; the NE900100, a one cell die of 750 µm gate
width; and the NE900200, a two cell die of 1500 µm total gate
width. The series is available in chip form or a variety of
hermetic ceramic packages. The NE900000, NE900100,
and NE900200 are standard die without wrap-around source-
metallization, while the NE900000G, NE900100G, and
NE900200G have wrap-around source metallization. The
series is space qualified.
NE9001/9002
12
9
6
3
2.0
10.0
Frequency (GHz)
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
NE900000
NE900000G
NE900075
NE900100
NE900100G
NE900175
NE900200
NE900200G
NE900275
NE900089A
89A
PACKAGE OUTLINE
00 (CHIP), 75
00 (CHIP), 75
00 (CHIP), 75
SYMBOLS
PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX
IDSS
Saturated Drain Current at
VDS = 2.5 V, VGS = 0
mA
80
120 150
80
120 150 150 225 300 300 450 600
VP
gm
Pinch-off Voltage at VDS = 2.5 V,
IDS = 2.5 mA
V
V
V
-1.5 -3.5
-5
-1.5 -3.5
-5
IDS = 5 mA
-2
-3.5
50
-5
IDS = 10 mA
-2
-3.5
100
-5
Transconductance at VDS = 2.5 V,
IDS = 50 mA
IDS = 90 mA
mS
mS
mS
25
25
IDS = 180 mA
RTH (C-C) ThermalResistance(Channel-to-Case)
°C/W
180
0.8
180
0.8
100
1.5
50
3
PT
TotalPowerDissipation
W
PTEST
Power Output at Test Point
PIN = 11 dBm, VDS = 8V, ID = 50mA,
f = 8 GHz
dBm 19.5 20.5
PIN = 12 dBm,VDS = 8V, ID = 50mA
f = 14.5 GHz
dBm
dBm
dBm
19.5 20.5
PIN = 15 dBm, VDS = 8V, ID = 90mA
f = 14.5 GHz
PIN = 19 dBm, VDS = 8 V, ID = 180 mA,
f = 14.5
22
23
23
25.5 26.5
P1dB
Output Power at 1 dB Compression
Point,
VDS = 8 V, ID = 50 mA, f = 8 GHz
VDS = 8 V, ID = 50 mA, f = 14.5 GHz
VDS = 8 V, ID = 90 mA, f = 14.5 GHz
VDS = 8 V, ID = 180 mA, f = 14.5 GHz
dBm
dBm
dBm
dBm
20.5
9
20
25
G1dB
Gain at 1 dB Compression Point
VDS = 8 V, ID = 50 mA, f = 8 GHz
VDS = 8 V, ID = 50 mA, f = 14.5 GHz
VDS = 8 V, ID = 90 mA, f = 14.5 GHz
VDS = 8 V, ID = 180 mA, f = 14.5 GHz
dB
dB
dB
dB
8
7
7
ηADD
Power Added Efficiency
VDS = 8 V, at P1dB Conditions.
%
27
27
27
26
California Eastern Laboratories