生命周期: | Obsolete | Reach Compliance Code: | unknown |
风险等级: | 5.82 | Is Samacsys: | N |
最大集电极电流 (IC): | 0.05 A | 基于收集器的最大容量: | 1.2 pF |
集电极-发射极最大电压: | 15 V | 配置: | SINGLE |
最高频带: | ULTRA HIGH FREQUENCY BAND | JESD-30 代码: | R-PDSO-G3 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 2000 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NE94432 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 50MA I(C) | TO-92 | |
NE94432TRB | CEL |
获取价格 |
RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Sili | |
NE94433 | NEC |
获取价格 |
NPN SILICON OSCILLATOR AND MIXER TRANSISTOR | |
NE94433-T1 | CEL |
获取价格 |
RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Sili | |
NE94433-T1B | NEC |
获取价格 |
NPN SILICON OSCILLATOR AND MIXER TRANSISTOR | |
NE94433-T2 | CEL |
获取价格 |
RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Sili | |
NE960R2 | NEC |
获取价格 |
0.2 W X, Ku-BAND POWER GaAs MES FET | |
NE960R200 | NEC |
获取价格 |
0.2 W X, Ku-BAND POWER GaAs MES FET | |
NE960R200-A | NEC |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal S | |
NE960R275 | NEC |
获取价格 |
0.2 W X, Ku-BAND POWER GaAs MES FET |