Datasheet > NE960R2

NE960R2

更新时间： 2024-02-22 02:37:37

品牌	Logo	应用领域
日电电子 - NEC		/
页数	文件大小	规格书
12页	64K
描述
0.2 W X, Ku-BAND POWER GaAs MES FET

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NE960R2 数据手册

PRELIMINARY DATA SHEET

N-CHANNEL GaAs MES FET

NE960R2 SERIES

0.2 W X, Ku-BAND POWER GaAs MES FET

DESCRIPTION

The NE960R2 Series are 0.2 W GaAs MES FETs designed for middle power transmitter applications for X, Ku-

band microwave communication systems. It is capable of delivering 0.2 watt of output power (CW) with high linear

gain, high efficiency and low distortion and are suitable as driver amplifiers for our X, Ku-band NEZ Series amplifiers

etc. The NE961R200 and the NE960R200 are available in chip form. The NE960R200 has a via hole source

grounding and PHS (Plated Heat Sink) for superior RF performance. The NE960R275 is available in a hermetically

sealed ceramic package. Reliability and performance uniformity are assured by NEC’s stringent quality and control

procedures.

FEATURES

•

High Output Power

High Linear Gain

: P^{o (1 dB)}= +25.0 dBm TYP.

: 10.0 dB TYP.

High Power Added Efficiency: 35 % TYP. @V^DS= 9 V, I^Dset= 90 mA, f = 14.5 GHz

ORDERING INFORMATION

Part Number

NE960R200

Package

Supplying Form

00 (CHIP)

ESD protective envelope

NE961R200

NE960R275

Remark To order evaluation samples, please contact your local NEC sales office.

(Part number for sample order: NE960R200, NE960R275, NE961R200)

Caution Please handle this device at static-free workstation, because this is an electrostatic sensitive

device.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. P13775EJ2V0DS00 (2nd edition)

Date Published July 1999 N CP(K)

Printed in Japan

The mark

shows major revised points.

1998, 1999

12 3 4 5 6 7...12

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与NE960R2相关器件

型号	品牌	获取价格	描述	数据表
NE960R200	NEC	获取价格	0.2 W X, Ku-BAND POWER GaAs MES FET
NE960R200-A	NEC	获取价格	RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal S
NE960R275	NEC	获取价格	0.2 W X, Ku-BAND POWER GaAs MES FET
NE960R275_01	NEC	获取价格	0.2W X, Ku-BAND POWER GaAs MESFET
NE960R275-A	NEC	获取价格	RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal S
NE960R5	NEC	获取价格	0.5 W X, Ku-BAND POWER GaAs MES FET
NE960R500	NEC	获取价格	0.5 W X, Ku-BAND POWER GaAs MES FET
NE960R500-A	NEC	获取价格	暂无描述
NE960R575	NEC	获取价格	0.5 W X, Ku-BAND POWER GaAs MES FET
NE960R575_01	NEC	获取价格	0.5W X, Ku-BAND POWER GaAs FET