生命周期: | Obsolete | Reach Compliance Code: | unknown |
风险等级: | 5.84 | Is Samacsys: | N |
外壳连接: | SOURCE | 配置: | SINGLE |
最小漏源击穿电压: | 20 V | 最大漏极电流 (Abs) (ID): | 1.2 A |
最大漏极电流 (ID): | 1.2 A | FET 技术: | METAL SEMICONDUCTOR |
最高频带: | KU BAND | JESD-30 代码: | R-XDFM-F2 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | UNSPECIFIED |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | N-CHANNEL | 功耗环境最大值: | 7.5 W |
表面贴装: | YES | 端子形式: | FLAT |
端子位置: | DUAL | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | GALLIUM ARSENIDE | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NE900873-11 | ETC |
获取价格 |
TRANSISTOR | JFET | N-CHANNEL | 20V V(BR)DSS | 1.2A I(DSS) | RFMOD | |
NE900873-12 | ETC |
获取价格 |
TRANSISTOR | JFET | N-CHANNEL | 20V V(BR)DSS | 1.2A I(DSS) | RFMOD | |
NE900873-13 | ETC |
获取价格 |
TRANSISTOR | JFET | N-CHANNEL | 20V V(BR)DSS | 1.2A I(DSS) | RFMOD | |
NE900873-14 | ETC |
获取价格 |
TRANSISTOR | JFET | N-CHANNEL | 20V V(BR)DSS | 1.2A I(DSS) | RFMOD | |
NE900873-15 | ETC |
获取价格 |
TRANSISTOR | JFET | N-CHANNEL | 20V V(BR)DSS | 1.2A I(DSS) | RFMOD | |
NE90100 | CEL |
获取价格 |
RF Small Signal Bipolar Transistor, 0.25A I(C), 1-Element, Ultra High Frequency Band, Sili | |
NE90115 | CEL |
获取价格 |
RF Small Signal Bipolar Transistor, 0.25A I(C), 1-Element, Ultra High Frequency Band, Sili | |
NE92 | INTERSIL |
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N-CHANNEL JFET | |
NE944 | NEC |
获取价格 |
NPN SILICON OSCILLATOR AND MIXER TRANSISTOR | |
NE94430 | NEC |
获取价格 |
NPN SILICON OSCILLATOR AND MIXER TRANSISTOR |