生命周期: | Obsolete | 包装说明: | UNCASED CHIP, R-XUUC-N5 |
Reach Compliance Code: | unknown | 风险等级: | 5.84 |
配置: | SINGLE | 最小漏源击穿电压: | 20 V |
最大漏极电流 (Abs) (ID): | 0.06 A | 最大漏极电流 (ID): | 0.06 A |
FET 技术: | METAL SEMICONDUCTOR | 最高频带: | KU BAND |
JESD-30 代码: | R-XUUC-N5 | 元件数量: | 1 |
端子数量: | 5 | 工作模式: | DEPLETION MODE |
封装主体材料: | UNSPECIFIED | 封装形状: | RECTANGULAR |
封装形式: | UNCASED CHIP | 极性/信道类型: | N-CHANNEL |
功耗环境最大值: | 3 W | 表面贴装: | YES |
端子形式: | NO LEAD | 端子位置: | UPPER |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | GALLIUM ARSENIDE |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NE900275 | NEC |
获取价格 |
Ku-BAND MEDIUM POWER GaAs MESFET |
![]() |
NE900275 | CEL |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal S |
![]() |
NE900400 | RENESAS |
获取价格 |
RF SMALL SIGNAL, FET |
![]() |
NE900474-15 | CEL |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, |
![]() |
NE900474-15 | RENESAS |
获取价格 |
KU BAND, GaAs, N-CHANNEL, RF POWER, FET |
![]() |
NE900873-11 | ETC |
获取价格 |
TRANSISTOR | JFET | N-CHANNEL | 20V V(BR)DSS | 1.2A I(DSS) | RFMOD |
![]() |
NE900873-12 | ETC |
获取价格 |
TRANSISTOR | JFET | N-CHANNEL | 20V V(BR)DSS | 1.2A I(DSS) | RFMOD |
![]() |
NE900873-13 | ETC |
获取价格 |
TRANSISTOR | JFET | N-CHANNEL | 20V V(BR)DSS | 1.2A I(DSS) | RFMOD |
![]() |
NE900873-14 | ETC |
获取价格 |
TRANSISTOR | JFET | N-CHANNEL | 20V V(BR)DSS | 1.2A I(DSS) | RFMOD |
![]() |
NE900873-15 | ETC |
获取价格 |
TRANSISTOR | JFET | N-CHANNEL | 20V V(BR)DSS | 1.2A I(DSS) | RFMOD |
![]() |