是否无铅: | 含铅 | 生命周期: | Obsolete |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.83 |
Is Samacsys: | N | 最大集电极电流 (IC): | 0.05 A |
最高频带: | S BAND | JESD-30 代码: | R-PDSO-G3 |
JESD-609代码: | e0 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
表面贴装: | YES | 端子面层: | TIN LEAD |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 2000 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NE94433-T1 | CEL |
获取价格 |
RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Sili |
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NE94433-T1B | NEC |
获取价格 |
NPN SILICON OSCILLATOR AND MIXER TRANSISTOR |
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NE94433-T2 | CEL |
获取价格 |
RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Sili |
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NE960R2 | NEC |
获取价格 |
0.2 W X, Ku-BAND POWER GaAs MES FET |
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NE960R200 | NEC |
获取价格 |
0.2 W X, Ku-BAND POWER GaAs MES FET |
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NE960R200-A | NEC |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal S |
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NE960R275 | NEC |
获取价格 |
0.2 W X, Ku-BAND POWER GaAs MES FET |
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NE960R275_01 | NEC |
获取价格 |
0.2W X, Ku-BAND POWER GaAs MESFET |
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NE960R275-A | NEC |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal S |
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NE960R5 | NEC |
获取价格 |
0.5 W X, Ku-BAND POWER GaAs MES FET |
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