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NE900275 PDF预览

NE900275

更新时间： 2024-02-04 07:08:13
品牌 Logo 应用领域
日电电子 - NEC 晶体射频场效应晶体管开关局域网
页数 文件大小 规格书
5页 72K
描述
Ku-BAND MEDIUM POWER GaAs MESFET

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中文翻译

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NE900275 技术参数

生命周期：Obsolete包装说明：FLANGE MOUNT, R-CDFM-F2
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.29.00.75风险等级：5.84
外壳连接：SOURCE配置：SINGLE
最小漏源击穿电压：20 V最大漏极电流 (ID)：0.6 A
FET 技术：METAL SEMICONDUCTOR最高频带：KU BAND
JESD-30 代码：R-CDFM-F2元件数量：1
端子数量：2工作模式：DEPLETION MODE
封装主体材料：CERAMIC, METAL-SEALED COFIRED封装形状：RECTANGULAR
封装形式：FLANGE MOUNT极性/信道类型：N-CHANNEL
认证状态：Not Qualified表面贴装：YES
端子形式：FLAT端子位置：DUAL
晶体管应用：AMPLIFIER晶体管元件材料：GALLIUM ARSENIDE
Base Number Matches：1

NE900275 数据手册

 浏览型号NE900275的Datasheet PDF文件第2页浏览型号NE900275的Datasheet PDF文件第3页浏览型号NE900275的Datasheet PDF文件第4页浏览型号NE900275的Datasheet PDF文件第5页 
NE9000 SERIES  
NE9001 SERIES  
NE9002 SERIES  
Ku-BAND MEDIUM  
POWER GaAs MESFET  
FEATURES  
TYPICAL LINEAR GAIN vs. FREQUENCY  
•
•
CLASS A OPERATION  
24  
21  
18  
HIGH OUTPUT POWER  
POUT = 26.5 dBm  
G1dB = 7 dB  
•
HIGH POWER ADDED EFFICIENCY  
NE9000  
DESCRIPTION  
15  
The NE9000, NE9001, and NE9002 are 0.5 micron recessed  
gate medium power GaAs FETs for commercial and space  
amplifier and oscillator applications to 20 GHz. Chip configu-  
rations available are: the NE900000, a one cell die of 400 µm  
gate width; the NE900100, a one cell die of 750 µm gate  
width; and the NE900200, a two cell die of 1500 µm total gate  
width. The series is available in chip form or a variety of  
hermetic ceramic packages. The NE900000, NE900100,  
and NE900200 are standard die without wrap-around source-  
metallization, while the NE900000G, NE900100G, and  
NE900200G have wrap-around source metallization. The  
series is space qualified.  
NE9001/9002  
12  
9
6
3
2.0  
10.0  
Frequency (GHz)  
ELECTRICAL CHARACTERISTICS (TA = 25°C)  
PART NUMBER  
NE900000  
NE900000G  
NE900075  
NE900100  
NE900100G  
NE900175  
NE900200  
NE900200G  
NE900275  
NE900089A  
89A  
PACKAGE OUTLINE  
00 (CHIP), 75  
00 (CHIP), 75  
00 (CHIP), 75  
SYMBOLS  
PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX  
IDSS  
Saturated Drain Current at  
VDS = 2.5 V, VGS = 0  
mA  
80  
120 150  
80  
120 150 150 225 300 300 450 600  
VP  
gm  
Pinch-off Voltage at VDS = 2.5 V,  
IDS = 2.5 mA  
V
V
V
-1.5 -3.5  
-5  
-1.5 -3.5  
-5  
IDS = 5 mA  
-2  
-3.5  
50  
-5  
IDS = 10 mA  
-2  
-3.5  
100  
-5  
Transconductance at VDS = 2.5 V,  
IDS = 50 mA  
IDS = 90 mA  
mS  
mS  
mS  
25  
25  
IDS = 180 mA  
RTH (C-C) ThermalResistance(Channel-to-Case)  
°C/W  
180  
0.8  
180  
0.8  
100  
1.5  
50  
3
PT  
TotalPowerDissipation  
W
PTEST  
Power Output at Test Point  
PIN = 11 dBm, VDS = 8V, ID = 50mA,  
f = 8 GHz  
dBm 19.5 20.5  
PIN = 12 dBm,VDS = 8V, ID = 50mA  
f = 14.5 GHz  
dBm  
dBm  
dBm  
19.5 20.5  
PIN = 15 dBm, VDS = 8V, ID = 90mA  
f = 14.5 GHz  
PIN = 19 dBm, VDS = 8 V, ID = 180 mA,  
f = 14.5  
22  
23  
23  
25.5 26.5  
P1dB  
Output Power at 1 dB Compression  
Point,  
VDS = 8 V, ID = 50 mA, f = 8 GHz  
VDS = 8 V, ID = 50 mA, f = 14.5 GHz  
VDS = 8 V, ID = 90 mA, f = 14.5 GHz  
VDS = 8 V, ID = 180 mA, f = 14.5 GHz  
dBm  
dBm  
dBm  
dBm  
20.5  
9
20  
25  
G1dB  
Gain at 1 dB Compression Point  
VDS = 8 V, ID = 50 mA, f = 8 GHz  
VDS = 8 V, ID = 50 mA, f = 14.5 GHz  
VDS = 8 V, ID = 90 mA, f = 14.5 GHz  
VDS = 8 V, ID = 180 mA, f = 14.5 GHz  
dB  
dB  
dB  
dB  
8
7
7
ηADD  
Power Added Efficiency  
VDS = 8 V, at P1dB Conditions.  
%
27  
27  
27  
26  
California Eastern Laboratories  
12345

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