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NE900000G

更新时间： 2024-01-16 11:56:21
品牌 Logo 应用领域
日电电子 - NEC /
页数 文件大小 规格书
5页 72K
描述
Ku-BAND MEDIUM POWER GaAs MESFET

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中文翻译

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NE900000G 技术参数

生命周期：Obsolete包装说明：UNCASED CHIP, R-XUUC-N3
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.21.00.40风险等级：5.84
配置：SINGLE最小漏源击穿电压：20 V
最大漏极电流 (ID)：0.15 AFET 技术：METAL SEMICONDUCTOR
最高频带：KU BANDJESD-30 代码：R-XUUC-N3
元件数量：1端子数量：3
工作模式：DEPLETION MODE封装主体材料：UNSPECIFIED
封装形状：RECTANGULAR封装形式：UNCASED CHIP
极性/信道类型：N-CHANNEL认证状态：Not Qualified
表面贴装：YES端子形式：NO LEAD
端子位置：UPPER晶体管应用：AMPLIFIER
晶体管元件材料：GALLIUM ARSENIDEBase Number Matches：1

NE900000G 数据手册

 浏览型号NE900000G的Datasheet PDF文件第2页浏览型号NE900000G的Datasheet PDF文件第3页浏览型号NE900000G的Datasheet PDF文件第4页浏览型号NE900000G的Datasheet PDF文件第5页 
NE9000 SERIES  
NE9001 SERIES  
NE9002 SERIES  
Ku-BAND MEDIUM  
POWER GaAs MESFET  
FEATURES  
TYPICAL LINEAR GAIN vs. FREQUENCY  
•
•
CLASS A OPERATION  
24  
21  
18  
HIGH OUTPUT POWER  
POUT = 26.5 dBm  
G1dB = 7 dB  
•
HIGH POWER ADDED EFFICIENCY  
NE9000  
DESCRIPTION  
15  
The NE9000, NE9001, and NE9002 are 0.5 micron recessed  
gate medium power GaAs FETs for commercial and space  
amplifier and oscillator applications to 20 GHz. Chip configu-  
rations available are: the NE900000, a one cell die of 400 µm  
gate width; the NE900100, a one cell die of 750 µm gate  
width; and the NE900200, a two cell die of 1500 µm total gate  
width. The series is available in chip form or a variety of  
hermetic ceramic packages. The NE900000, NE900100,  
and NE900200 are standard die without wrap-around source-  
metallization, while the NE900000G, NE900100G, and  
NE900200G have wrap-around source metallization. The  
series is space qualified.  
NE9001/9002  
12  
9
6
3
2.0  
10.0  
Frequency (GHz)  
ELECTRICAL CHARACTERISTICS (TA = 25°C)  
PART NUMBER  
NE900000  
NE900000G  
NE900075  
NE900100  
NE900100G  
NE900175  
NE900200  
NE900200G  
NE900275  
NE900089A  
89A  
PACKAGE OUTLINE  
00 (CHIP), 75  
00 (CHIP), 75  
00 (CHIP), 75  
SYMBOLS  
PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX  
IDSS  
Saturated Drain Current at  
VDS = 2.5 V, VGS = 0  
mA  
80  
120 150  
80  
120 150 150 225 300 300 450 600  
VP  
gm  
Pinch-off Voltage at VDS = 2.5 V,  
IDS = 2.5 mA  
V
V
V
-1.5 -3.5  
-5  
-1.5 -3.5  
-5  
IDS = 5 mA  
-2  
-3.5  
50  
-5  
IDS = 10 mA  
-2  
-3.5  
100  
-5  
Transconductance at VDS = 2.5 V,  
IDS = 50 mA  
IDS = 90 mA  
mS  
mS  
mS  
25  
25  
IDS = 180 mA  
RTH (C-C) ThermalResistance(Channel-to-Case)  
°C/W  
180  
0.8  
180  
0.8  
100  
1.5  
50  
3
PT  
TotalPowerDissipation  
W
PTEST  
Power Output at Test Point  
PIN = 11 dBm, VDS = 8V, ID = 50mA,  
f = 8 GHz  
dBm 19.5 20.5  
PIN = 12 dBm,VDS = 8V, ID = 50mA  
f = 14.5 GHz  
dBm  
dBm  
dBm  
19.5 20.5  
PIN = 15 dBm, VDS = 8V, ID = 90mA  
f = 14.5 GHz  
PIN = 19 dBm, VDS = 8 V, ID = 180 mA,  
f = 14.5  
22  
23  
23  
25.5 26.5  
P1dB  
Output Power at 1 dB Compression  
Point,  
VDS = 8 V, ID = 50 mA, f = 8 GHz  
VDS = 8 V, ID = 50 mA, f = 14.5 GHz  
VDS = 8 V, ID = 90 mA, f = 14.5 GHz  
VDS = 8 V, ID = 180 mA, f = 14.5 GHz  
dBm  
dBm  
dBm  
dBm  
20.5  
9
20  
25  
G1dB  
Gain at 1 dB Compression Point  
VDS = 8 V, ID = 50 mA, f = 8 GHz  
VDS = 8 V, ID = 50 mA, f = 14.5 GHz  
VDS = 8 V, ID = 90 mA, f = 14.5 GHz  
VDS = 8 V, ID = 180 mA, f = 14.5 GHz  
dB  
dB  
dB  
dB  
8
7
7
ηADD  
Power Added Efficiency  
VDS = 8 V, at P1dB Conditions.  
%
27  
27  
27  
26  
California Eastern Laboratories  
12345

中文翻译

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与NE900000G相关器件

型号 品牌 获取价格 描述 数据表
NE900075 NEC

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 		Ku-BAND MEDIUM POWER GaAs MESFET
NE900075 CEL

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 		RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel,
NE900089A NEC

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 		Ku-BAND MEDIUM POWER GaAs MESFET
NE900089A CEL

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 		RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel,
NE9001 NEC

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 		Ku-BAND MEDIUM POWER GaAs MESFET
NE900100 CEL

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 		RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal S
NE900100 NEC

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 		Ku-BAND MEDIUM POWER GaAs MESFET
NE900100G NEC

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 		Ku-BAND MEDIUM POWER GaAs MESFET
NE900100G CEL

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 		RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal S
NE900175 NEC

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 		Ku-BAND MEDIUM POWER GaAs MESFET

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